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Article: Modeling the post-breakdown I-V characteristics of ultrathin SiO 2 films with multiple snapbacks

TitleModeling the post-breakdown I-V characteristics of ultrathin SiO 2 films with multiple snapbacks
Authors
Chen, TTse, MSFung, S
KeywordsI-V Characteristics
Modeling
Multiple Snapbacks
Percolation Model
Power Law
Thin Oxide
Issue Date2001
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htm
Citation
Japanese Journal Of Applied Physics, Part 2: Letters, 2001, v. 40 n. 7 A, p. L666-L668 How to Cite?
DOI: http://dx.doi.org/10.1143/JJAP.40.L666
AbstractMultiple conduction states in ultra-thin SiO 2 films after hard breakdown could be observed when the oxides exhibited the behavior of multiple snapbacks. Although the I-V characteristics seem very complicated when the snapbacks occurred with multiple conduction states involved, a careful modeling indicates that each conduction state was well defined. The I-V characteristic of each conduction state can be well modeled by the power law, and a convincing linear dependence is observed for each state when the I-V characteristics are plotted in log-log scale. These findings consist with the percolation model.
Persistent Identifierhttp://hdl.handle.net/10722/174806
ISSN
0021-4922
2023 Impact Factor: 1.5
2023 SCImago Journal Rankings: 0.307
ISI Accession Number ID
WOS:000170778200006
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, Ten_US
dc.contributor.authorTse, MSen_US
dc.contributor.authorFung, Sen_US
dc.date.accessioned2012-11-26T08:47:33Z-
dc.date.available2012-11-26T08:47:33Z-
dc.date.issued2001en_US
dc.identifier.citationJapanese Journal Of Applied Physics, Part 2: Letters, 2001, v. 40 n. 7 A, p. L666-L668en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/10722/174806-
dc.description.abstractMultiple conduction states in ultra-thin SiO 2 films after hard breakdown could be observed when the oxides exhibited the behavior of multiple snapbacks. Although the I-V characteristics seem very complicated when the snapbacks occurred with multiple conduction states involved, a careful modeling indicates that each conduction state was well defined. The I-V characteristic of each conduction state can be well modeled by the power law, and a convincing linear dependence is observed for each state when the I-V characteristics are plotted in log-log scale. These findings consist with the percolation model.en_US
dc.languageengen_US
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htmen_US
dc.relation.ispartofJapanese Journal of Applied Physics, Part 2: Lettersen_US
dc.subjectI-V Characteristicsen_US
dc.subjectModelingen_US
dc.subjectMultiple Snapbacksen_US
dc.subjectPercolation Modelen_US
dc.subjectPower Lawen_US
dc.subjectThin Oxideen_US
dc.titleModeling the post-breakdown I-V characteristics of ultrathin SiO 2 films with multiple snapbacksen_US
dc.typeArticleen_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1143/JJAP.40.L666-
dc.identifier.scopuseid_2-s2.0-0035388906en_US
dc.identifier.hkuros63931-
dc.identifier.hkuros61273-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035388906&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume40en_US
dc.identifier.issue7 Aen_US
dc.identifier.spageL666en_US
dc.identifier.epageL668en_US
dc.identifier.isiWOS:000170778200006-
dc.publisher.placeJapanen_US
dc.identifier.scopusauthoridChen, T=7405540443en_US
dc.identifier.scopusauthoridTse, MS=7103352646en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.issnl0021-4922-

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