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Article: Increase in perpendicular coercivity of Co-Ni ferrite-plated films by Zn ferrite underlayers
Title | Increase in perpendicular coercivity of Co-Ni ferrite-plated films by Zn ferrite underlayers |
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Authors | |
Issue Date | 2000 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2000, v. 87 n. 9, p. 6878-6880 How to Cite? |
Abstract | The present article explains that Co-Ni ferrite-plated films with perpendicular coercivity H c⊥ of 3.8 kOe were obtained using Zn ferrite underlayers at the substrate temperature of 90°C without postannealing. Though a thinner recording layer is required for low noise media, perpendicular anisotropy of Co-Ni ferrite single-layer films of 50 nm in thickness is weak due to worse crystallinity in the initial growth region. Their reproduced waveforms were single pulses, as observed in the longitudinal recording media. Thus, the underlayers of a spinel type of Zn ferrite were used to improve the crystallinity in the Co-Ni ferrite layers, in particular, in the initial growth region. The thickness of the Co-Ni ferrite layer t CoNi was 50 nm, and that of the Zn ferrite underlayers t Zn was in the range of 25-110 nm. While H c⊥ of the Co-Ni ferrite single layers with t CoNi of 50 nm was 2.5 kOe, H c⊥ of the double-layer films increased with increasing t Zn, reaching 3.8 kOe at t Zn of 110 nm. The reproduced waveforms exhibited dipulses that are typical in the perpendicular recording media. These results will open the way to develop the perpendicular recording disks with high H c⊥ using plastic substrates at low temperature. © 2000 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/174848 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Kitamoto, Y | en_US |
dc.contributor.author | Zhang, F | en_US |
dc.contributor.author | Abe, M | en_US |
dc.contributor.author | Naoe, M | en_US |
dc.date.accessioned | 2012-11-26T08:47:47Z | - |
dc.date.available | 2012-11-26T08:47:47Z | - |
dc.date.issued | 2000 | en_US |
dc.identifier.citation | Journal of Applied Physics, 2000, v. 87 n. 9, p. 6878-6880 | - |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174848 | - |
dc.description.abstract | The present article explains that Co-Ni ferrite-plated films with perpendicular coercivity H c⊥ of 3.8 kOe were obtained using Zn ferrite underlayers at the substrate temperature of 90°C without postannealing. Though a thinner recording layer is required for low noise media, perpendicular anisotropy of Co-Ni ferrite single-layer films of 50 nm in thickness is weak due to worse crystallinity in the initial growth region. Their reproduced waveforms were single pulses, as observed in the longitudinal recording media. Thus, the underlayers of a spinel type of Zn ferrite were used to improve the crystallinity in the Co-Ni ferrite layers, in particular, in the initial growth region. The thickness of the Co-Ni ferrite layer t CoNi was 50 nm, and that of the Zn ferrite underlayers t Zn was in the range of 25-110 nm. While H c⊥ of the Co-Ni ferrite single layers with t CoNi of 50 nm was 2.5 kOe, H c⊥ of the double-layer films increased with increasing t Zn, reaching 3.8 kOe at t Zn of 110 nm. The reproduced waveforms exhibited dipulses that are typical in the perpendicular recording media. These results will open the way to develop the perpendicular recording disks with high H c⊥ using plastic substrates at low temperature. © 2000 American Institute of Physics. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_US |
dc.relation.ispartof | Journal of Applied Physics | en_US |
dc.title | Increase in perpendicular coercivity of Co-Ni ferrite-plated films by Zn ferrite underlayers | en_US |
dc.type | Article | en_US |
dc.identifier.email | Zhang, F: fuchun@hkucc.hku.hk | en_US |
dc.identifier.authority | Zhang, F=rp00840 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.372872 | - |
dc.identifier.scopus | eid_2-s2.0-0039194652 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0039194652&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 87 | en_US |
dc.identifier.issue | 9 | - |
dc.identifier.spage | 6878 | en_US |
dc.identifier.epage | 6880 | en_US |
dc.identifier.isi | WOS:000086728800322 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Kitamoto, Y=7006209500 | en_US |
dc.identifier.scopusauthorid | Zhang, F=14012468800 | en_US |
dc.identifier.scopusauthorid | Abe, M=8539881800 | en_US |
dc.identifier.scopusauthorid | Naoe, M=35467285400 | en_US |
dc.identifier.issnl | 0021-8979 | - |