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Article: Increase in perpendicular coercivity of Co-Ni ferrite-plated films by Zn ferrite underlayers

TitleIncrease in perpendicular coercivity of Co-Ni ferrite-plated films by Zn ferrite underlayers
Authors
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2000, v. 87 n. 9, p. 6878-6880 How to Cite?
AbstractThe present article explains that Co-Ni ferrite-plated films with perpendicular coercivity H c⊥ of 3.8 kOe were obtained using Zn ferrite underlayers at the substrate temperature of 90°C without postannealing. Though a thinner recording layer is required for low noise media, perpendicular anisotropy of Co-Ni ferrite single-layer films of 50 nm in thickness is weak due to worse crystallinity in the initial growth region. Their reproduced waveforms were single pulses, as observed in the longitudinal recording media. Thus, the underlayers of a spinel type of Zn ferrite were used to improve the crystallinity in the Co-Ni ferrite layers, in particular, in the initial growth region. The thickness of the Co-Ni ferrite layer t CoNi was 50 nm, and that of the Zn ferrite underlayers t Zn was in the range of 25-110 nm. While H c⊥ of the Co-Ni ferrite single layers with t CoNi of 50 nm was 2.5 kOe, H c⊥ of the double-layer films increased with increasing t Zn, reaching 3.8 kOe at t Zn of 110 nm. The reproduced waveforms exhibited dipulses that are typical in the perpendicular recording media. These results will open the way to develop the perpendicular recording disks with high H c⊥ using plastic substrates at low temperature. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174848
ISSN
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorKitamoto, Yen_US
dc.contributor.authorZhang, Fen_US
dc.contributor.authorAbe, Men_US
dc.contributor.authorNaoe, Men_US
dc.date.accessioned2012-11-26T08:47:47Z-
dc.date.available2012-11-26T08:47:47Z-
dc.date.issued2000en_US
dc.identifier.citationJournal of Applied Physics, 2000, v. 87 n. 9, p. 6878-6880-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/174848-
dc.description.abstractThe present article explains that Co-Ni ferrite-plated films with perpendicular coercivity H c⊥ of 3.8 kOe were obtained using Zn ferrite underlayers at the substrate temperature of 90°C without postannealing. Though a thinner recording layer is required for low noise media, perpendicular anisotropy of Co-Ni ferrite single-layer films of 50 nm in thickness is weak due to worse crystallinity in the initial growth region. Their reproduced waveforms were single pulses, as observed in the longitudinal recording media. Thus, the underlayers of a spinel type of Zn ferrite were used to improve the crystallinity in the Co-Ni ferrite layers, in particular, in the initial growth region. The thickness of the Co-Ni ferrite layer t CoNi was 50 nm, and that of the Zn ferrite underlayers t Zn was in the range of 25-110 nm. While H c⊥ of the Co-Ni ferrite single layers with t CoNi of 50 nm was 2.5 kOe, H c⊥ of the double-layer films increased with increasing t Zn, reaching 3.8 kOe at t Zn of 110 nm. The reproduced waveforms exhibited dipulses that are typical in the perpendicular recording media. These results will open the way to develop the perpendicular recording disks with high H c⊥ using plastic substrates at low temperature. © 2000 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleIncrease in perpendicular coercivity of Co-Ni ferrite-plated films by Zn ferrite underlayersen_US
dc.typeArticleen_US
dc.identifier.emailZhang, F: fuchun@hkucc.hku.hken_US
dc.identifier.authorityZhang, F=rp00840en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.372872-
dc.identifier.scopuseid_2-s2.0-0039194652en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0039194652&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume87en_US
dc.identifier.issue9-
dc.identifier.spage6878en_US
dc.identifier.epage6880en_US
dc.identifier.isiWOS:000086728800322-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridKitamoto, Y=7006209500en_US
dc.identifier.scopusauthoridZhang, F=14012468800en_US
dc.identifier.scopusauthoridAbe, M=8539881800en_US
dc.identifier.scopusauthoridNaoe, M=35467285400en_US
dc.identifier.issnl0021-8979-

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