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Article: Effect of Ni addition into Co ferrite thin films for perpendicular recording media
Title | Effect of Ni addition into Co ferrite thin films for perpendicular recording media |
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Authors | |
Issue Date | 2000 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2000, v. 87 n. 9, p. 6881-6883 How to Cite? |
Abstract | The present article describes effects of doping Ni 2+ ions into Co ferrite plated films on film structure, magnetic properties, and read/write characteristics. While thinner films are required for low noise level even in perpendicular recording media, average surface roughness R a of the Co ferrite films increased from 4 to 6 nm with decreasing the film thickness from 100 to 50 nm. Adding Ni 2+ ions had an effect on controlling the grain growth, resulting in a reduction in R a to 3-4 nm for the 50-nm-thick films by adding a small amount of Ni 2+ ions {r m[=C Ni/(C Co+C Ni)]=0.1}. Perpendicular coercivity H c⊥ of the Co-Ni ferrite film at r m=0.1 was 2500 Oe, which is almost the same as that of the Co ferrite films, and H c⊥ decreased with increasing r m. Atomic force microscope images showed that the Co-Ni ferrite films were composed of uniform and isolated grains without coagulation. As a result, a Co-Ni ferrite medium fabricated at r m=0.1 exhibited lower noise level than a Co ferrite medium without Ni addition. © 2000 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/174857 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Zhang, F | en_US |
dc.contributor.author | Kitamoto, Y | en_US |
dc.contributor.author | Abe, M | en_US |
dc.contributor.author | Naoe, M | en_US |
dc.date.accessioned | 2012-11-26T08:47:50Z | - |
dc.date.available | 2012-11-26T08:47:50Z | - |
dc.date.issued | 2000 | en_US |
dc.identifier.citation | Journal of Applied Physics, 2000, v. 87 n. 9, p. 6881-6883 | - |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174857 | - |
dc.description.abstract | The present article describes effects of doping Ni 2+ ions into Co ferrite plated films on film structure, magnetic properties, and read/write characteristics. While thinner films are required for low noise level even in perpendicular recording media, average surface roughness R a of the Co ferrite films increased from 4 to 6 nm with decreasing the film thickness from 100 to 50 nm. Adding Ni 2+ ions had an effect on controlling the grain growth, resulting in a reduction in R a to 3-4 nm for the 50-nm-thick films by adding a small amount of Ni 2+ ions {r m[=C Ni/(C Co+C Ni)]=0.1}. Perpendicular coercivity H c⊥ of the Co-Ni ferrite film at r m=0.1 was 2500 Oe, which is almost the same as that of the Co ferrite films, and H c⊥ decreased with increasing r m. Atomic force microscope images showed that the Co-Ni ferrite films were composed of uniform and isolated grains without coagulation. As a result, a Co-Ni ferrite medium fabricated at r m=0.1 exhibited lower noise level than a Co ferrite medium without Ni addition. © 2000 American Institute of Physics. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_US |
dc.relation.ispartof | Journal of Applied Physics | en_US |
dc.title | Effect of Ni addition into Co ferrite thin films for perpendicular recording media | en_US |
dc.type | Article | en_US |
dc.identifier.email | Zhang, F: fuchun@hkucc.hku.hk | en_US |
dc.identifier.authority | Zhang, F=rp00840 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.372873 | - |
dc.identifier.scopus | eid_2-s2.0-0040973563 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0040973563&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 87 | en_US |
dc.identifier.issue | 9 | - |
dc.identifier.spage | 6881 | en_US |
dc.identifier.epage | 6883 | en_US |
dc.identifier.isi | WOS:000086728800323 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Zhang, F=14012468800 | en_US |
dc.identifier.scopusauthorid | Kitamoto, Y=7006209500 | en_US |
dc.identifier.scopusauthorid | Abe, M=8539881800 | en_US |
dc.identifier.scopusauthorid | Naoe, M=35467285400 | en_US |
dc.identifier.issnl | 0021-8979 | - |