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Article: Structural properties of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate

TitleStructural properties of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate
Authors
Dai, XQWu, HSXu, SHXie, MHTong, SY
Issue Date2004
PublisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtml
Citation
Surface Review And Letters, 2004, v. 11 n. 1, p. 1-6 How to Cite?
DOI: http://dx.doi.org/10.1142/S0218625X04005937
AbstractAb initio total energy calculations are performed to determine the interface structure of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate. The results show that the GaN film is of the wurtzite structure and has the Ga-polarity. It is also shown that stacking mismatch boundaries (SMBs) caused by the coalescence of GaN islands grown on stepped terraces of the 6H-SiC(0001) surface may be removed by stacking faults as the film grows. The types of SMBs on a stepped 6H-SiC(0001) surface are discussed.
Persistent Identifierhttp://hdl.handle.net/10722/174945
ISSN
0218-625X
2021 Impact Factor: 1.240
2020 SCImago Journal Rankings: 0.261
ISI Accession Number ID
WOS:000220983700001
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorDai, XQen_US
dc.contributor.authorWu, HSen_US
dc.contributor.authorXu, SHen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorTong, SYen_US
dc.date.accessioned2012-11-26T08:48:18Z-
dc.date.available2012-11-26T08:48:18Z-
dc.date.issued2004en_US
dc.identifier.citationSurface Review And Letters, 2004, v. 11 n. 1, p. 1-6en_US
dc.identifier.issn0218-625Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/174945-
dc.description.abstractAb initio total energy calculations are performed to determine the interface structure of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrate. The results show that the GaN film is of the wurtzite structure and has the Ga-polarity. It is also shown that stacking mismatch boundaries (SMBs) caused by the coalescence of GaN islands grown on stepped terraces of the 6H-SiC(0001) surface may be removed by stacking faults as the film grows. The types of SMBs on a stepped 6H-SiC(0001) surface are discussed.en_US
dc.languageengen_US
dc.publisherWorld Scientific Publishing Co Pte Ltd. The Journal's web site is located at http://www.worldscinet.com/srl/srl.shtmlen_US
dc.relation.ispartofSurface Review and Lettersen_US
dc.titleStructural properties of GaN films grown on the 6H-SiC(0001) (√3 × √3)R30° substrateen_US
dc.typeArticleen_US
dc.identifier.emailWu, HS: hswu@hkucc.hku.hken_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityWu, HS=rp00813en_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1142/S0218625X04005937en_US
dc.identifier.scopuseid_2-s2.0-1942519895en_US
dc.identifier.hkuros88913-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1942519895&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume11en_US
dc.identifier.issue1en_US
dc.identifier.spage1en_US
dc.identifier.epage6en_US
dc.identifier.isiWOS:000220983700001-
dc.publisher.placeSingaporeen_US
dc.identifier.scopusauthoridDai, XQ=55237280400en_US
dc.identifier.scopusauthoridWu, HS=7405584367en_US
dc.identifier.scopusauthoridXu, SH=36832008600en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridTong, SY=24512624800en_US
dc.identifier.issnl0218-625X-

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