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Article: Characteristics of InGaAs quantum dot infrared photodetectors

TitleCharacteristics of InGaAs quantum dot infrared photodetectors
Authors
Xu, SJChua, SJMei, TWang, XCZhang, XHKarunasiri, GFan, WJWang, CHJiang, JWang, SXie, XG
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 73 n. 21, p. 3153-3155 How to Cite?
DOI: http://dx.doi.org/10.1063/1.122703
AbstractA quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174953
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000077063800044
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorMei, Ten_US
dc.contributor.authorWang, XCen_US
dc.contributor.authorZhang, XHen_US
dc.contributor.authorKarunasiri, Gen_US
dc.contributor.authorFan, WJen_US
dc.contributor.authorWang, CHen_US
dc.contributor.authorJiang, Jen_US
dc.contributor.authorWang, Sen_US
dc.contributor.authorXie, XGen_US
dc.date.accessioned2012-11-26T08:48:20Z-
dc.date.available2012-11-26T08:48:20Z-
dc.date.issued1998en_US
dc.identifier.citationApplied Physics Letters, 1998, v. 73 n. 21, p. 3153-3155-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174953-
dc.description.abstractA quantum dot infrared photodetector (QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-optic characteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength. © 1998 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleCharacteristics of InGaAs quantum dot infrared photodetectorsen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.122703en_US
dc.identifier.scopuseid_2-s2.0-22244489704en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-22244489704&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume73en_US
dc.identifier.issue21en_US
dc.identifier.spage3153en_US
dc.identifier.epage3155en_US
dc.identifier.isiWOS:000077063800044-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridMei, T=8259931100en_US
dc.identifier.scopusauthoridWang, XC=8527523100en_US
dc.identifier.scopusauthoridZhang, XH=8543612300en_US
dc.identifier.scopusauthoridKarunasiri, G=7003840635en_US
dc.identifier.scopusauthoridFan, WJ=34770971100en_US
dc.identifier.scopusauthoridWang, CH=8231951600en_US
dc.identifier.scopusauthoridJiang, J=55228867800en_US
dc.identifier.scopusauthoridWang, S=15833540900en_US
dc.identifier.scopusauthoridXie, XG=8642311000en_US
dc.identifier.issnl0003-6951-

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