File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers

TitleBand gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers
Authors
Issue Date2006
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2006, v. 88 n. 4, article no. 041903, p. 1-3 How to Cite?
AbstractThe optical properties of two kinds of InGaNGaN quantum-wells light emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the Si doped ones exhibit a well exponential time evolution. A new model developed by O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, and W. H. Rühle [J. Optoelectron. Adv. Mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. It is found that the Si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in InGaNGaN layered heterostructures. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174994
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, YJen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorLi, Qen_US
dc.contributor.authorZhao, DGen_US
dc.contributor.authorYang, Hen_US
dc.date.accessioned2012-11-26T08:48:41Z-
dc.date.available2012-11-26T08:48:41Z-
dc.date.issued2006en_US
dc.identifier.citationApplied Physics Letters, 2006, v. 88 n. 4, article no. 041903, p. 1-3-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174994-
dc.description.abstractThe optical properties of two kinds of InGaNGaN quantum-wells light emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the Si doped ones exhibit a well exponential time evolution. A new model developed by O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, and W. H. Rühle [J. Optoelectron. Adv. Mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. It is found that the Si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in InGaNGaN layered heterostructures. © 2006 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleBand gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriersen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2168035en_US
dc.identifier.scopuseid_2-s2.0-31544476840en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-31544476840&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume88en_US
dc.identifier.issue4en_US
dc.identifier.spagearticle no. 041903, p. 1-
dc.identifier.epagearticle no. 041903, p. 3-
dc.identifier.isiWOS:000234968600026-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWang, YJ=8296286800en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridLi, Q=7405861869en_US
dc.identifier.scopusauthoridZhao, DG=7403489944en_US
dc.identifier.scopusauthoridYang, H=10638776900en_US
dc.identifier.issnl0003-6951-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats