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Article: Surface edge state and half-quantized Hall conductance in topological insulators

TitleSurface edge state and half-quantized Hall conductance in topological insulators
Authors
Issue Date2011
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2011, v. 84 n. 8, article no. 085312 How to Cite?
AbstractWe study the surface local density of states and the transport properties of a three-dimensional (3D) topological insulator (TI) in the presence of a uniform spin-splitting Zeeman field. We find chiral edge states exist on the gapped surfaces of the 3D TI, which can be considered as interface states between domains of massive and massless Dirac fermions. Effectively these states are the result of splitting of a perfect interface conducting channel. This picture is confirmed by the Landauer-Büttiker calculations in four-terminal Hall bars made of 3D TIs. It is demonstrated that the difference between the clockwise and counterclockwise transmission coefficients of the two neighboring terminals is approximately one-half, which suggests that the half-quantized Hall conductance can be manifested in an appropriate experimental setup. We also predict that the quantized anomalous Hall effect exists in thin films of TIs where such effective Zeeman felds are present. © 2011 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/175193
ISSN
2014 Impact Factor: 3.736
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChu, RLen_US
dc.contributor.authorShi, Jen_US
dc.contributor.authorShen, SQen_US
dc.date.accessioned2012-11-26T08:51:08Z-
dc.date.available2012-11-26T08:51:08Z-
dc.date.issued2011en_US
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2011, v. 84 n. 8, article no. 085312-
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://hdl.handle.net/10722/175193-
dc.description.abstractWe study the surface local density of states and the transport properties of a three-dimensional (3D) topological insulator (TI) in the presence of a uniform spin-splitting Zeeman field. We find chiral edge states exist on the gapped surfaces of the 3D TI, which can be considered as interface states between domains of massive and massless Dirac fermions. Effectively these states are the result of splitting of a perfect interface conducting channel. This picture is confirmed by the Landauer-Büttiker calculations in four-terminal Hall bars made of 3D TIs. It is demonstrated that the difference between the clockwise and counterclockwise transmission coefficients of the two neighboring terminals is approximately one-half, which suggests that the half-quantized Hall conductance can be manifested in an appropriate experimental setup. We also predict that the quantized anomalous Hall effect exists in thin films of TIs where such effective Zeeman felds are present. © 2011 American Physical Society.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)-
dc.rightsCopyright 2011 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.84.085312-
dc.titleSurface edge state and half-quantized Hall conductance in topological insulatorsen_US
dc.typeArticleen_US
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_US
dc.identifier.authorityShen, SQ=rp00775en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1103/PhysRevB.84.085312en_US
dc.identifier.scopuseid_2-s2.0-80052487555en_US
dc.identifier.hkuros242869-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80052487555&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume84en_US
dc.identifier.issue8en_US
dc.identifier.spagearticle no. 085312-
dc.identifier.epagearticle no. 085312-
dc.identifier.eissn1550-235X-
dc.identifier.isiWOS:000294227700006-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChu, RL=25925722300en_US
dc.identifier.scopusauthoridShi, J=7404494854en_US
dc.identifier.scopusauthoridShen, SQ=7403431266en_US
dc.identifier.citeulike11057903-
dc.identifier.issnl1098-0121-

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