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Article: Anomalous anisotropic magnetoresistance in topological insulator films

TitleAnomalous anisotropic magnetoresistance in topological insulator films
Authors
Wang, JLi, HChang, CHe, KLee, JSLu, HSun, YMa, XSamarth, NShen, SXue, QXie, MChan, MHW
KeywordsBi 2Se 3 film
low temperature
magnetoresistance
Topological insulator
transport property
Issue Date2012
Citation
Nano Research, 2012, v. 5 n. 10, p. 739-746 How to Cite?
DOI: http://dx.doi.org/10.1007/s12274-012-0260-z
AbstractTopological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurements, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi 2Se 3 topological insulator thin films. Interestingly, measurements under an in-plane magnetic field, along and perpendicular to the bias current show anomalous opposite magnetoresistance. © 2012 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.
Persistent Identifierhttp://hdl.handle.net/10722/175222
ISSN
1998-0124
2023 Impact Factor: 9.5
2023 SCImago Journal Rankings: 2.539
ISI Accession Number ID
WOS:000310087400008
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, Jen_HK
dc.contributor.authorLi, Hen_HK
dc.contributor.authorChang, Cen_HK
dc.contributor.authorHe, Ken_HK
dc.contributor.authorLee, JSen_HK
dc.contributor.authorLu, Hen_HK
dc.contributor.authorSun, Yen_HK
dc.contributor.authorMa, Xen_HK
dc.contributor.authorSamarth, Nen_HK
dc.contributor.authorShen, Sen_HK
dc.contributor.authorXue, Qen_HK
dc.contributor.authorXie, Men_HK
dc.contributor.authorChan, MHWen_HK
dc.date.accessioned2012-11-26T08:54:58Z-
dc.date.available2012-11-26T08:54:58Z-
dc.date.issued2012en_HK
dc.identifier.citationNano Research, 2012, v. 5 n. 10, p. 739-746en_HK
dc.identifier.issn1998-0124en_HK
dc.identifier.urihttp://hdl.handle.net/10722/175222-
dc.description.abstractTopological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurements, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi 2Se 3 topological insulator thin films. Interestingly, measurements under an in-plane magnetic field, along and perpendicular to the bias current show anomalous opposite magnetoresistance. © 2012 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.en_HK
dc.languageengen_US
dc.relation.ispartofNano Researchen_HK
dc.rightsThe original publication is available at www.springerlink.com-
dc.subjectBi 2Se 3 filmen_HK
dc.subjectlow temperatureen_HK
dc.subjectmagnetoresistanceen_HK
dc.subjectTopological insulatoren_HK
dc.subjecttransport propertyen_HK
dc.titleAnomalous anisotropic magnetoresistance in topological insulator filmsen_HK
dc.typeArticleen_HK
dc.identifier.emailLi, H: hdli1978@hkucc.hku.hken_HK
dc.identifier.emailLu, H: luhz@hku.hken_HK
dc.identifier.emailShen, S: sshen@hkucc.hku.hken_HK
dc.identifier.emailXie, M: mhxie@hku.hken_HK
dc.identifier.authorityLi, H=rp00739en_HK
dc.identifier.authorityLu, H=rp01599en_HK
dc.identifier.authorityShen, S=rp00775en_HK
dc.identifier.authorityXie, M=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/s12274-012-0260-zen_HK
dc.identifier.scopuseid_2-s2.0-84867888414en_HK
dc.identifier.hkuros212537-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84867888414&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume5en_HK
dc.identifier.issue10en_HK
dc.identifier.spage739en_HK
dc.identifier.epage746en_HK
dc.identifier.isiWOS:000310087400008-
dc.identifier.scopusauthoridWang, J=36077615400en_HK
dc.identifier.scopusauthoridLi, H=36441549600en_HK
dc.identifier.scopusauthoridChang, C=36238000700en_HK
dc.identifier.scopusauthoridHe, K=8726956700en_HK
dc.identifier.scopusauthoridLee, JS=54179542700en_HK
dc.identifier.scopusauthoridLu, H=24376662200en_HK
dc.identifier.scopusauthoridSun, Y=37125815400en_HK
dc.identifier.scopusauthoridMa, X=14011898800en_HK
dc.identifier.scopusauthoridSamarth, N=7006288661en_HK
dc.identifier.scopusauthoridShen, S=7403431266en_HK
dc.identifier.scopusauthoridXue, Q=7201986973en_HK
dc.identifier.scopusauthoridXie, M=7202255416en_HK
dc.identifier.scopusauthoridChan, MHW=8048092200en_HK
dc.identifier.citeulike11411285-
dc.identifier.issnl1998-0000-

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