Optical properties of δ-doped GaAs and GaAs/Al 0.1Ga 0.9As superlattices

Abstract

Radiative transition in δ-doped GaAs superlattices with and without Al 0.1Ga 0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of δ-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained. © 1996 Chin. Phys. Soc.