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Conference Paper: Self-organized growth and characterization of InAs, InGaAs and InAlAs quantum dots

TitleSelf-organized growth and characterization of InAs, InGaAs and InAlAs quantum dots
Authors
Chua, SJXu, SJWang, CHFan, WJJiang, JXie, XG
Issue Date1998
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings of SPIE - The International Society for Optical Engineering, 1998, v. 3316 n. 1, p. 11-17 How to Cite?
AbstractA series of doped and undoped In xGa 1-xAs (x = 0, 0.35, 0.5) and In xAl 1-xAs (x = 0.5, 0.7) self-organized quantum dots (QD) have been directly grown on GaAs, In 0.1Ga 0.9As layers via S-K growth mode by molecular beam epitaxy. Their microstructure and optical properties were characterized with high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) techniques. Post-growth rapid thermal annealing (RTA) effect on microstructure and luminescence properties of InAs QD were studied. Moreover, the optical transition energies of InAs QD grown on GaAs are calculated using effective mass theory and made a direct comparison with the experimental values.
Persistent Identifierhttp://hdl.handle.net/10722/176148
ISSN
0277-786X
2020 SCImago Journal Rankings: 0.192

 

DC FieldValueLanguage
dc.contributor.authorChua, SJen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorWang, CHen_US
dc.contributor.authorFan, WJen_US
dc.contributor.authorJiang, Jen_US
dc.contributor.authorXie, XGen_US
dc.date.accessioned2012-11-26T09:06:26Z-
dc.date.available2012-11-26T09:06:26Z-
dc.date.issued1998en_US
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, 1998, v. 3316 n. 1, p. 11-17en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/176148-
dc.description.abstractA series of doped and undoped In xGa 1-xAs (x = 0, 0.35, 0.5) and In xAl 1-xAs (x = 0.5, 0.7) self-organized quantum dots (QD) have been directly grown on GaAs, In 0.1Ga 0.9As layers via S-K growth mode by molecular beam epitaxy. Their microstructure and optical properties were characterized with high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) techniques. Post-growth rapid thermal annealing (RTA) effect on microstructure and luminescence properties of InAs QD were studied. Moreover, the optical transition energies of InAs QD grown on GaAs are calculated using effective mass theory and made a direct comparison with the experimental values.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.titleSelf-organized growth and characterization of InAs, InGaAs and InAlAs quantum dotsen_US
dc.typeConference_Paperen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.identifier.scopuseid_2-s2.0-0032289328en_US
dc.identifier.volume3316en_US
dc.identifier.issue1en_US
dc.identifier.spage11en_US
dc.identifier.epage17en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridWang, CH=8060383200en_US
dc.identifier.scopusauthoridFan, WJ=35956227400en_US
dc.identifier.scopusauthoridJiang, J=55228869700en_US
dc.identifier.scopusauthoridXie, XG=8642311000en_US
dc.identifier.issnl0277-786X-

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