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Conference Paper: GaN films fabricated by ammoniating electrodeposited layers

TitleGaN films fabricated by ammoniating electrodeposited layers
Authors
Wang, HChen, XYNg, AMCFang, FDjurišić, ABChan, WK
Issue Date2009
Citation
2009 14Th Optoelectronics And Communications Conference, Oecc 2009, 2009 How to Cite?
DOI: http://dx.doi.org/10.1109/OECC.2009.5219909
AbstractGaN films have been fabricated by ammoniating electrodeposited films. We have investigated the influence of electrodeposition parameters on the morphologies and structures of electrodeposited layers on Si(100) subtrates by using SEM and XRD. © 2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/176201
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, Hen_US
dc.contributor.authorChen, XYen_US
dc.contributor.authorNg, AMCen_US
dc.contributor.authorFang, Fen_US
dc.contributor.authorDjurišić, ABen_US
dc.contributor.authorChan, WKen_US
dc.date.accessioned2012-11-26T09:06:50Z-
dc.date.available2012-11-26T09:06:50Z-
dc.date.issued2009en_US
dc.identifier.citation2009 14Th Optoelectronics And Communications Conference, Oecc 2009, 2009en_US
dc.identifier.urihttp://hdl.handle.net/10722/176201-
dc.description.abstractGaN films have been fabricated by ammoniating electrodeposited films. We have investigated the influence of electrodeposition parameters on the morphologies and structures of electrodeposited layers on Si(100) subtrates by using SEM and XRD. © 2009 IEEE.en_US
dc.languageengen_US
dc.relation.ispartof2009 14th OptoElectronics and Communications Conference, OECC 2009en_US
dc.titleGaN films fabricated by ammoniating electrodeposited layersen_US
dc.typeConference_Paperen_US
dc.identifier.emailDjurišić, AB: dalek@hku.hken_US
dc.identifier.authorityDjurišić, AB=rp00690en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/OECC.2009.5219909en_US
dc.identifier.scopuseid_2-s2.0-70350734544en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70350734544&selection=ref&src=s&origin=recordpageen_US
dc.identifier.scopusauthoridWang, H=8694347500en_US
dc.identifier.scopusauthoridChen, XY=22933917300en_US
dc.identifier.scopusauthoridNg, AMC=12140078600en_US
dc.identifier.scopusauthoridFang, F=7202929817en_US
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_US
dc.identifier.scopusauthoridChan, WK=7403917961en_US

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