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Conference Paper: InN nanorods growth: Influence of temperature, catalyst, and gas flow rate

TitleInN nanorods growth: Influence of temperature, catalyst, and gas flow rate
Authors
Cai, XMTam, KHLeung, YHDjurišić, ABXie, MH
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/
Citation
AIP Conference Proceedings, 2007, v. 893 n. 1, p. 53-54 How to Cite?
DOI: http://dx.doi.org/10.1063/1.2729766
AbstractOne dimensional (1-D) semiconductor nanostructures are attracting lots of attention due to their novel properties different from bulk and their potential application in nanodevices. Indium nitride (InN) is of particular interest for various optoelectronics and electronic applications, especially for field effect transistors due to its large drift velocity. However, the synthesis and characterization of InN nanostructures have not been studied comprehensively. In this work, the growth of InN nanorods was studied. It was found that the morphology of the nanorods was strongly dependent on the NH 3 flow rate and the catalyst used. Based on the obtained results, the possible growth mechanisms of InN nanorods are discussed. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/176213
ISSN
0094-243X
2020 SCImago Journal Rankings: 0.177
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorCai, XMen_HK
dc.contributor.authorTam, KHen_HK
dc.contributor.authorLeung, YHen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2012-11-26T09:06:54Z-
dc.date.available2012-11-26T09:06:54Z-
dc.date.issued2007en_HK
dc.identifier.citationAIP Conference Proceedings, 2007, v. 893 n. 1, p. 53-54-
dc.identifier.issn0094-243Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/176213-
dc.description.abstractOne dimensional (1-D) semiconductor nanostructures are attracting lots of attention due to their novel properties different from bulk and their potential application in nanodevices. Indium nitride (InN) is of particular interest for various optoelectronics and electronic applications, especially for field effect transistors due to its large drift velocity. However, the synthesis and characterization of InN nanostructures have not been studied comprehensively. In this work, the growth of InN nanorods was studied. It was found that the morphology of the nanorods was strongly dependent on the NH 3 flow rate and the catalyst used. Based on the obtained results, the possible growth mechanisms of InN nanorods are discussed. © 2007 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/-
dc.relation.ispartofAIP Conference Proceedingsen_HK
dc.titleInN nanorods growth: Influence of temperature, catalyst, and gas flow rateen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.2729766en_HK
dc.identifier.scopuseid_2-s2.0-77958512385en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77958512385&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume893en_HK
dc.identifier.issue1-
dc.identifier.spage53en_HK
dc.identifier.epage54en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridCai, XM=16303198600en_HK
dc.identifier.scopusauthoridTam, KH=8533246200en_HK
dc.identifier.scopusauthoridLeung, YH=16042693500en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.issnl0094-243X-

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