File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: P-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaN

TitleP-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaN
Authors
Ng, AMCChen, XYFang, FDjurišić, ABChan, WKCheah, KW
KeywordsElectrodeposition
Zno Nanorods
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/
Citation
AIP Conference Proceedings, 2011, v. 1399 n. 1, p. 579-580 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3666512
AbstractWe studied the effect of carrier concentration in p-GaN substrate on the performance of p-GaN/n-ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p-GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine. The morphology and optical properties of ZnO nanorods were studied using photoluminescence and electron microscopy, and the LED device performance was studied by electroluminescence (EL) and I-V measurements. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/176218
ISSN
0094-243X
2023 SCImago Journal Rankings: 0.152
ISI Accession Number ID
WOS:000301053000273
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorNg, AMCen_US
dc.contributor.authorChen, XYen_US
dc.contributor.authorFang, Fen_US
dc.contributor.authorDjurišić, ABen_US
dc.contributor.authorChan, WKen_US
dc.contributor.authorCheah, KWen_US
dc.date.accessioned2012-11-26T09:06:57Z-
dc.date.available2012-11-26T09:06:57Z-
dc.date.issued2011en_US
dc.identifier.citationAIP Conference Proceedings, 2011, v. 1399 n. 1, p. 579-580-
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/176218-
dc.description.abstractWe studied the effect of carrier concentration in p-GaN substrate on the performance of p-GaN/n-ZnO nanorod heterojunction LEDs. ZnO nanorods were electrodeposited on commercial p-GaN wafers in a two electrode system from aqueous solutions of zinc nitrate and hexamethylenetetramine. The morphology and optical properties of ZnO nanorods were studied using photoluminescence and electron microscopy, and the LED device performance was studied by electroluminescence (EL) and I-V measurements. © 2011 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/-
dc.relation.ispartofAIP Conference Proceedingsen_US
dc.subjectElectrodepositionen_US
dc.subjectZno Nanorodsen_US
dc.titleP-GaN/ZnO nanorod heterojunction LEDs - Effect of carrier concentration in p-GaNen_US
dc.typeConference_Paperen_US
dc.identifier.emailDjurišić, AB: dalek@hku.hken_US
dc.identifier.authorityDjurišić, AB=rp00690en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3666512en_US
dc.identifier.scopuseid_2-s2.0-84862818861en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84862818861&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume1399en_US
dc.identifier.issue1-
dc.identifier.spage579en_US
dc.identifier.epage580en_US
dc.identifier.isiWOS:000301053000273-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridNg, AMC=12140078600en_US
dc.identifier.scopusauthoridChen, XY=35182594600en_US
dc.identifier.scopusauthoridFang, F=7202929817en_US
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_US
dc.identifier.scopusauthoridChan, WK=55048776000en_US
dc.identifier.scopusauthoridCheah, KW=7102792922en_US
dc.identifier.issnl0094-243X-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats