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Article: Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?
Title | Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? |
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Authors | |
Keywords | Band edge Chemical vapour deposition Doping concentration Energy regions Gan epilayers |
Issue Date | 2012 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2012, v. 101 n. 19, article no. 191102, p. 1-3 How to Cite? |
Abstract | Low-temperature reflectance spectra of a series of Si-doped GaN epilayers with different doping concentrations grown on sapphire by metal-organic chemical vapour deposition were measured. In addition to the excitonic polariton resonance structures at the band edge, interference oscillating patterns were observed in the energy region well below the band gap. The amplitudes of these oscillation patterns show a distinct dependence on the doping concentrations of the samples. From the thin-film optical interference principle, an approach connecting the amplitude of the interference oscillations and the impurity scattering was established. Good agreement between experiment and theory is achieved. © 2012 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/180134 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zheng, CC | en_US |
dc.contributor.author | Xu, S | en_US |
dc.contributor.author | Zhang, F | en_US |
dc.contributor.author | Ning, J | en_US |
dc.contributor.author | Zhao, DG | en_US |
dc.contributor.author | Yang, H | en_US |
dc.contributor.author | Che, CM | en_US |
dc.date.accessioned | 2013-01-21T01:29:29Z | - |
dc.date.available | 2013-01-21T01:29:29Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.citation | Applied Physics Letters, 2012, v. 101 n. 19, article no. 191102, p. 1-3 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/180134 | - |
dc.description.abstract | Low-temperature reflectance spectra of a series of Si-doped GaN epilayers with different doping concentrations grown on sapphire by metal-organic chemical vapour deposition were measured. In addition to the excitonic polariton resonance structures at the band edge, interference oscillating patterns were observed in the energy region well below the band gap. The amplitudes of these oscillation patterns show a distinct dependence on the doping concentrations of the samples. From the thin-film optical interference principle, an approach connecting the amplitude of the interference oscillations and the impurity scattering was established. Good agreement between experiment and theory is achieved. © 2012 American Institute of Physics. | - |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.rights | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2012, v. 101 n. 19, article no. 191102, p. 1-3 and may be found at https://doi.org/10.1063/1.4766188 | - |
dc.subject | Band edge | - |
dc.subject | Chemical vapour deposition | - |
dc.subject | Doping concentration | - |
dc.subject | Energy regions | - |
dc.subject | Gan epilayers | - |
dc.title | Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? | en_US |
dc.type | Article | en_US |
dc.identifier.email | Zheng, CC: cczheng@hku.hk | en_US |
dc.identifier.email | Xu, S: sjxu@hku.hk | en_US |
dc.identifier.email | Zhang, F: zhfhku@hku.hk | en_US |
dc.identifier.email | Ning, J: jqning@graduate.hku.hk | en_US |
dc.identifier.email | Che, CM: cmche@hku.hk | en_US |
dc.identifier.authority | Xu, S=rp00821 | en_US |
dc.identifier.authority | Ning, J=rp00769 | en_US |
dc.identifier.authority | Che, CM=rp00670 | en_US |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.4766188 | - |
dc.identifier.scopus | eid_2-s2.0-84869046691 | - |
dc.identifier.hkuros | 212899 | en_US |
dc.identifier.volume | 101 | en_US |
dc.identifier.issue | 19 | - |
dc.identifier.spage | article no. 191102, p. 1 | - |
dc.identifier.epage | article no. 191102, p. 3 | - |
dc.identifier.isi | WOS:000311320100002 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0003-6951 | - |