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Article: Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

TitleTriple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials
Authors
KeywordsAb initio calculations
InN/GaN(111)
Misfit dislocations
Reconstruction
Scanning tunneling microscopy
Issue Date2012
PublisherElsevier B.V.. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 2012, v. 606, p. 1728-1738 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/180159
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, LXen_US
dc.contributor.authorMcMahon, WEen_US
dc.contributor.authorLiu, Yen_US
dc.contributor.authorCai, Yen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorWang, Nen_US
dc.contributor.authorZhang, SBen_US
dc.date.accessioned2013-01-21T01:31:20Z-
dc.date.available2013-01-21T01:31:20Z-
dc.date.issued2012en_US
dc.identifier.citationSurface Science, 2012, v. 606, p. 1728-1738en_US
dc.identifier.urihttp://hdl.handle.net/10722/180159-
dc.languageengen_US
dc.publisherElsevier B.V.. The Journal's web site is located at http://www.elsevier.com/locate/suscen_US
dc.relation.ispartofSurface Scienceen_US
dc.subjectAb initio calculations-
dc.subjectInN/GaN(111)-
dc.subjectMisfit dislocations-
dc.subjectReconstruction-
dc.subjectScanning tunneling microscopy-
dc.titleTriple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materialsen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.identifier.doi10.1016/j.susc.2012.07.018-
dc.identifier.scopuseid_2-s2.0-84865267946-
dc.identifier.hkuros212895en_US
dc.identifier.volume606en_US
dc.identifier.spage1728en_US
dc.identifier.epage1738en_US
dc.identifier.isiWOS:000308628300024-
dc.identifier.citeulike11195883-

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