File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors

TitleEffects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors
Authors
Yang, LCWang, RXXu, Sxing, ZFan, YMShi, XSFu, KZhang, BS
Issue Date2013
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2013, v. 113 n. 8, article no. 084501, p. 1-5 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4791760
Persistent Identifierhttp://hdl.handle.net/10722/182177
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000315667500077

 

DC FieldValueLanguage
dc.contributor.authorYang, LCen_US
dc.contributor.authorWang, RXen_US
dc.contributor.authorXu, Sen_US
dc.contributor.authorxing, Zen_US
dc.contributor.authorFan, YMen_US
dc.contributor.authorShi, XSen_US
dc.contributor.authorFu, Ken_US
dc.contributor.authorZhang, BSen_US
dc.date.accessioned2013-04-17T08:31:38Z-
dc.date.available2013-04-17T08:31:38Z-
dc.date.issued2013en_US
dc.identifier.citationJournal of Applied Physics, 2013, v. 113 n. 8, article no. 084501, p. 1-5-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/182177-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsCopyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2013, v. 113 n. 8, article no. 084501, p. 1-5 and may be found at https://doi.org/10.1063/1.4791760-
dc.titleEffects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectorsen_US
dc.typeArticleen_US
dc.identifier.emailXu, S: sjxu@hku.hken_US
dc.identifier.authorityXu, S=rp00821en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4791760-
dc.identifier.scopuseid_2-s2.0-84874843005-
dc.identifier.hkuros213776en_US
dc.identifier.volume113en_US
dc.identifier.issue8-
dc.identifier.spagearticle no. 084501, p. 1-
dc.identifier.epagearticle no. 084501, p. 5-
dc.identifier.isiWOS:000315667500077-
dc.identifier.issnl0021-8979-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats