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Article: A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals
Title | A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals |
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Authors | |
Issue Date | 2013 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2013, v. 113 n. 12, article no. 124502, p. 1-8 How to Cite? |
Abstract | We report on the space charge spectroscopy studies performed on thermally treated melt-grown single crystal ZnO. The samples were annealed in different ambients at 700 °C and also in oxygen ambient at different temperatures. A shallow donor with a thermal activation enthalpy of 27 meV was observed in the as-received samples by capacitance-temperature, CT scans. After annealing the samples, an increase in the shallow donor concentrations was observed. For the annealed samples, E27 could not be detected and a new shallow donor with a thermal activation enthalpy of 35 meV was detected. For samples annealed above 650 °C, an increase in acceptor concentration was observed which affected the low temperature capacitance. Deep level transient spectroscopy revealed the presence of five deep level defects, E1, E2, E3, E4, and E5 in the as-received samples. Annealing of the samples at 650 °C removes the E4 and E5 deep level defects, while E2 also anneals-out at temperatures above 800 °C. After annealing at 700 °C, the T2 deep level defect was observed in all other ambient conditions except in Ar. The emission properties of the E3 deep level defect are observed to change with increase in annealing temperature beyond 800 °C. For samples annealed beyond 800 °C, a decrease in activation enthalpy with increase in annealing temperature has been observed which suggests an enhanced thermal ionization rate of E3 with annealing. |
Persistent Identifier | http://hdl.handle.net/10722/182179 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Mtangi, W | - |
dc.contributor.author | Schmidt, M | - |
dc.contributor.author | Auret, FD | - |
dc.contributor.author | Meyer, WE | - |
dc.contributor.author | Janse van Rensburg, PJ | - |
dc.contributor.author | Diale, M | - |
dc.contributor.author | Nel, JM | - |
dc.contributor.author | Das, AGM | - |
dc.contributor.author | Ling, FCC | - |
dc.contributor.author | Chawanda, A | - |
dc.date.accessioned | 2013-04-17T08:31:40Z | - |
dc.date.available | 2013-04-17T08:31:40Z | - |
dc.date.issued | 2013 | - |
dc.identifier.citation | Journal of Applied Physics, 2013, v. 113 n. 12, article no. 124502, p. 1-8 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10722/182179 | - |
dc.description.abstract | We report on the space charge spectroscopy studies performed on thermally treated melt-grown single crystal ZnO. The samples were annealed in different ambients at 700 °C and also in oxygen ambient at different temperatures. A shallow donor with a thermal activation enthalpy of 27 meV was observed in the as-received samples by capacitance-temperature, CT scans. After annealing the samples, an increase in the shallow donor concentrations was observed. For the annealed samples, E27 could not be detected and a new shallow donor with a thermal activation enthalpy of 35 meV was detected. For samples annealed above 650 °C, an increase in acceptor concentration was observed which affected the low temperature capacitance. Deep level transient spectroscopy revealed the presence of five deep level defects, E1, E2, E3, E4, and E5 in the as-received samples. Annealing of the samples at 650 °C removes the E4 and E5 deep level defects, while E2 also anneals-out at temperatures above 800 °C. After annealing at 700 °C, the T2 deep level defect was observed in all other ambient conditions except in Ar. The emission properties of the E3 deep level defect are observed to change with increase in annealing temperature beyond 800 °C. For samples annealed beyond 800 °C, a decrease in activation enthalpy with increase in annealing temperature has been observed which suggests an enhanced thermal ionization rate of E3 with annealing. | - |
dc.language | eng | - |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | - |
dc.relation.ispartof | Journal of Applied Physics | - |
dc.rights | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2013, v. 113 n. 12, article no. 124502, p. 1-8 and may be found at https://doi.org/10.1063/1.4796139 | - |
dc.title | A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals | - |
dc.type | Article | - |
dc.identifier.email | Ling, FCC: ccling@hkucc.hku.hk | - |
dc.identifier.authority | Ling, FCC=rp00747 | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.4796139 | - |
dc.identifier.scopus | eid_2-s2.0-84875779186 | - |
dc.identifier.hkuros | 213847 | - |
dc.identifier.volume | 113 | - |
dc.identifier.issue | 12 | - |
dc.identifier.spage | article no. 124502, p. 1 | - |
dc.identifier.epage | article no. 124502, p. 8 | - |
dc.identifier.isi | WOS:000316967800054 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0021-8979 | - |