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Conference Paper: Flexible transistor active matrix array with all screen-printed electrodes

TitleFlexible transistor active matrix array with all screen-printed electrodes
Authors
KeywordsActive matrix array
DNTT
Parylene-C
Room temperature
Screen-printing
Issue Date2013
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2
Citation
Conference 8831 - Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, San Diego, California, USA,26-29 August 2013. In Proceedings of SPIE, 2013, v. 8831, p. article no. 883116 How to Cite?
AbstractFlexible transistor active matrix array is fabricated on PEN substrate using all screen-printed gate, source and drain electrodes. Parylene-C and DNTT act as gate dielectric layer and semiconductor, respectively. The transistor possesses high mobility (0.33 cm2V-1 s-1), large on/off ratio (< 106) and low leakage current (10 pA). Active matrix array consists of 10×10 transistors were demonstrated. Transistors exhibited average mobility of 0.29 cm2V-1s-1 and on/off ratio larger than 104 in array form. In the transistor array, we achieve 75μm channel length and a size of 2 mm × 2 mm for each element in the array which indicates the current screen-printing method has large potential in large-area circuits and display applications. © 2013 SPIE.
Persistent Identifierhttp://hdl.handle.net/10722/199412
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorPeng, Ben_US
dc.contributor.authorLin, JWen_US
dc.contributor.authorChan, KLen_US
dc.date.accessioned2014-07-22T01:16:45Z-
dc.date.available2014-07-22T01:16:45Z-
dc.date.issued2013en_US
dc.identifier.citationConference 8831 - Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI, San Diego, California, USA,26-29 August 2013. In Proceedings of SPIE, 2013, v. 8831, p. article no. 883116en_US
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/199412-
dc.description.abstractFlexible transistor active matrix array is fabricated on PEN substrate using all screen-printed gate, source and drain electrodes. Parylene-C and DNTT act as gate dielectric layer and semiconductor, respectively. The transistor possesses high mobility (0.33 cm2V-1 s-1), large on/off ratio (< 106) and low leakage current (10 pA). Active matrix array consists of 10×10 transistors were demonstrated. Transistors exhibited average mobility of 0.29 cm2V-1s-1 and on/off ratio larger than 104 in array form. In the transistor array, we achieve 75μm channel length and a size of 2 mm × 2 mm for each element in the array which indicates the current screen-printing method has large potential in large-area circuits and display applications. © 2013 SPIE.-
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2-
dc.relation.ispartofProceedings of SPIE - International Society for Optical Engineeringen_US
dc.rightsCopyright 2013 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.2022621-
dc.subjectActive matrix array-
dc.subjectDNTT-
dc.subjectParylene-C-
dc.subjectRoom temperature-
dc.subjectScreen-printing-
dc.titleFlexible transistor active matrix array with all screen-printed electrodesen_US
dc.typeConference_Paperen_US
dc.identifier.emailChan, KL: pklc@hku.hken_US
dc.identifier.authorityChan, KL=rp01532en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.2022621-
dc.identifier.scopuseid_2-s2.0-84889072013-
dc.identifier.hkuros231431en_US
dc.identifier.volume8831en_US
dc.identifier.spagearticle no. 883116en_US
dc.identifier.epagearticle no. 883116en_US
dc.identifier.isiWOS:000327122500007-
dc.publisher.placeUnited States-
dc.identifier.issnl0277-786X-

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