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Article: Chemical composition study of high-K La-silicate gate stacks at sub-nanometer scale

TitleChemical composition study of high-K La-silicate gate stacks at sub-nanometer scale
Authors
Liu, FYANG, GDuscher, G
Keywordselectron energy loss spectroscopy
gate stack
high-k dielectric
La-silicate
Z-contrast imaging
Issue Date2014
Citation
Physica Status Solidi A, 2014, v. 211 n. 11, p. 2537-2540 How to Cite?
DOI: http://dx.doi.org/10.1002/pssa.201431143
Persistent Identifierhttp://hdl.handle.net/10722/200665
ISI Accession Number ID
WOS:000344461800017

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_US
dc.contributor.authorYANG, Gen_US
dc.contributor.authorDuscher, Gen_US
dc.date.accessioned2014-08-21T06:54:17Z-
dc.date.available2014-08-21T06:54:17Z-
dc.date.issued2014en_US
dc.identifier.citationPhysica Status Solidi A, 2014, v. 211 n. 11, p. 2537-2540en_US
dc.identifier.urihttp://hdl.handle.net/10722/200665-
dc.languageengen_US
dc.relation.ispartofPhysica Status Solidi Aen_US
dc.subjectelectron energy loss spectroscopy-
dc.subjectgate stack-
dc.subjecthigh-k dielectric-
dc.subjectLa-silicate-
dc.subjectZ-contrast imaging-
dc.titleChemical composition study of high-K La-silicate gate stacks at sub-nanometer scaleen_US
dc.typeArticleen_US
dc.identifier.emailLiu, F: fordliu@hku.hken_US
dc.identifier.authorityLiu, F=rp01358en_US
dc.identifier.doi10.1002/pssa.201431143-
dc.identifier.scopuseid_2-s2.0-84927804375-
dc.identifier.hkuros234294en_US
dc.identifier.spage2537en_US
dc.identifier.epage2540en_US
dc.identifier.isiWOS:000344461800017-

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