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Conference Paper: Density functional-based tight binding for atomic level simulation of electron devices including the semiconductor-oxide interfaces

TitleDensity functional-based tight binding for atomic level simulation of electron devices including the semiconductor-oxide interfaces
Authors
Markov, SNYam, CYChen, G
Issue Date2013
Citation
The 44th IEEE Semiconductor Interface Specialists Conference (SISC 2013), Arlington, VA., 22 July 2013. How to Cite?
DescriptionSession 11 - Poster Session 2 Preview: no. 11.13
Persistent Identifierhttp://hdl.handle.net/10722/201198

 

DC FieldValueLanguage
dc.contributor.authorMarkov, SNen_US
dc.contributor.authorYam, CYen_US
dc.contributor.authorChen, Gen_US
dc.date.accessioned2014-08-21T07:17:25Z-
dc.date.available2014-08-21T07:17:25Z-
dc.date.issued2013en_US
dc.identifier.citationThe 44th IEEE Semiconductor Interface Specialists Conference (SISC 2013), Arlington, VA., 22 July 2013.en_US
dc.identifier.urihttp://hdl.handle.net/10722/201198-
dc.descriptionSession 11 - Poster Session 2 Preview: no. 11.13-
dc.languageengen_US
dc.relation.ispartofIEEE Semiconductor Interface Specialists Conference (SISC)en_US
dc.titleDensity functional-based tight binding for atomic level simulation of electron devices including the semiconductor-oxide interfacesen_US
dc.typeConference_Paperen_US
dc.identifier.emailMarkov, SN: figaro@hku.hken_US
dc.identifier.emailYam, CY: yamcy1@hku.hken_US
dc.identifier.emailChen, G: ghc@yangtze.hku.hken_US
dc.identifier.authorityYam, CY=rp01399en_US
dc.identifier.authorityChen, G=rp00671en_US
dc.identifier.hkuros235062en_US

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