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Conference Paper: Field-Effect Ferroelectric-Semiconductor Solar Cells
Title | Field-Effect Ferroelectric-Semiconductor Solar Cells |
---|---|
Authors | |
Keywords | ferroelectric field-effect photovoltaics polarization semiconductor |
Issue Date | 2014 |
Publisher | I E E E. |
Citation | The IEEE 40th Photovoltaic Specialist Conference (PVSC), Denver, USA, 8-13 June 2014. In I E E E Photovoltaic Specialists Conference. Conference Record, 2014, p. 2542-2544 How to Cite? |
Abstract | Traditional photovoltaic devices employ limited semiconductor materials largely due to the P-N junction structure. We have developed a new kind of field-effect ferroelectric semiconductor solar cells. Prototype cells have been demonstrated successfully. Substantial photovoltaic effect and rectifying behavior were experimentally observed. In addition, simulation study was conducted to indicate that the induced electric field due to the bound surface changes of the ferroelectric could be extended into the semiconductor. The simulation results are consistent with experimental observations. This unique device structure offers a promising alternative to achieve novel solar cells. The new cells are not P-N junction based, and in principle offer more flexibility in materials selection and optimizing charge generation, separation and collection for achieving high performance solar cells. |
Persistent Identifier | http://hdl.handle.net/10722/201256 |
ISBN | |
ISSN | 2023 SCImago Journal Rankings: 0.294 |
DC Field | Value | Language |
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dc.contributor.author | Wang, L | en_US |
dc.contributor.author | Liu, F | en_US |
dc.contributor.author | Lau, CM | en_US |
dc.contributor.author | Wang, L | en_US |
dc.contributor.author | Yang, G | en_US |
dc.contributor.author | Zheng, D | en_US |
dc.contributor.author | Li, Z | en_US |
dc.date.accessioned | 2014-08-21T07:19:44Z | - |
dc.date.available | 2014-08-21T07:19:44Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.citation | The IEEE 40th Photovoltaic Specialist Conference (PVSC), Denver, USA, 8-13 June 2014. In I E E E Photovoltaic Specialists Conference. Conference Record, 2014, p. 2542-2544 | en_US |
dc.identifier.isbn | 9781479943982 | - |
dc.identifier.issn | 0160-8371 | - |
dc.identifier.uri | http://hdl.handle.net/10722/201256 | - |
dc.description.abstract | Traditional photovoltaic devices employ limited semiconductor materials largely due to the P-N junction structure. We have developed a new kind of field-effect ferroelectric semiconductor solar cells. Prototype cells have been demonstrated successfully. Substantial photovoltaic effect and rectifying behavior were experimentally observed. In addition, simulation study was conducted to indicate that the induced electric field due to the bound surface changes of the ferroelectric could be extended into the semiconductor. The simulation results are consistent with experimental observations. This unique device structure offers a promising alternative to achieve novel solar cells. The new cells are not P-N junction based, and in principle offer more flexibility in materials selection and optimizing charge generation, separation and collection for achieving high performance solar cells. | - |
dc.language | eng | en_US |
dc.publisher | I E E E. | - |
dc.relation.ispartof | I E E E Photovoltaic Specialists Conference. Conference Record | en_US |
dc.subject | ferroelectric | - |
dc.subject | field-effect | - |
dc.subject | photovoltaics | - |
dc.subject | polarization | - |
dc.subject | semiconductor | - |
dc.title | Field-Effect Ferroelectric-Semiconductor Solar Cells | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Liu, F: fordliu@hku.hk | en_US |
dc.identifier.authority | Liu, F=rp01358 | en_US |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/PVSC.2014.6925448 | - |
dc.identifier.scopus | eid_2-s2.0-84912074267 | - |
dc.identifier.hkuros | 234324 | en_US |
dc.identifier.spage | 2542 | en_US |
dc.identifier.epage | 2544 | en_US |
dc.publisher.place | United States | en_US |
dc.identifier.issnl | 0160-8371 | - |