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Article: Gate controlled electronic transport in monolayer MoS2 field effect transistor

TitleGate controlled electronic transport in monolayer MoS2 field effect transistor
Authors
Zhou, YFXian, HMWang, BYu, YJWei, YDWang, J
Issue Date2015
PublisherAIP Publishing. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2015, v. 117 n. 10, article no. 104307 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4914954
Persistent Identifierhttp://hdl.handle.net/10722/209329
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000351442900032

 

DC FieldValueLanguage
dc.contributor.authorZhou, YFen_US
dc.contributor.authorXian, HMen_US
dc.contributor.authorWang, Ben_US
dc.contributor.authorYu, YJen_US
dc.contributor.authorWei, YDen_US
dc.contributor.authorWang, Jen_US
dc.date.accessioned2015-04-17T05:07:13Z-
dc.date.available2015-04-17T05:07:13Z-
dc.date.issued2015en_US
dc.identifier.citationJournal of Applied Physics, 2015, v. 117 n. 10, article no. 104307-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/209329-
dc.languageengen_US
dc.publisherAIP Publishing. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsCopyright 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics, 2015, v. 117 n. 10, article no. 104307 and may be found at https://doi.org/10.1063/1.4914954-
dc.titleGate controlled electronic transport in monolayer MoS2 field effect transistoren_US
dc.typeArticleen_US
dc.identifier.emailWang, J: jianwang@hku.hken_US
dc.identifier.authorityWang, J=rp00799en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4914954en_US
dc.identifier.scopuseid_2-s2.0-84924972204-
dc.identifier.hkuros242820en_US
dc.identifier.volume117en_US
dc.identifier.issue10-
dc.identifier.spagearticle no. 104307en_US
dc.identifier.epagearticle no. 104307en_US
dc.identifier.isiWOS:000351442900032-
dc.identifier.issnl0021-8979-

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