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Article: Efficiency enhancement by defect engineering in perovskite photovoltaic cells prepared using evaporated PbI2/CH3NH3I multilayers

TitleEfficiency enhancement by defect engineering in perovskite photovoltaic cells prepared using evaporated PbI2/CH3NH3I multilayers
Authors
Ng, ARen, ZWShen, QCheung, SHGokkaya, HCBai, GXWang, JCYang, LJSo, SKDjurisic, ALeung, WWFHao, JHChan, WKSurya, C
Issue Date2015
PublisherThe Royal Society of Chemistry. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/ta#!recentarticles&all
Citation
Journal of Materials Chemistry A, 2015, v. 3 n. 17, p. 9223-9231 How to Cite?
DOI: http://dx.doi.org/10.1039/C4TA05070C
Persistent Identifierhttp://hdl.handle.net/10722/211725
ISSN
2050-7488
2023 Impact Factor: 10.7
2023 SCImago Journal Rankings: 2.804
ISI Accession Number ID
WOS:000353420800039

 

DC FieldValueLanguage
dc.contributor.authorNg, A-
dc.contributor.authorRen, ZW-
dc.contributor.authorShen, Q-
dc.contributor.authorCheung, SH-
dc.contributor.authorGokkaya, HC-
dc.contributor.authorBai, GX-
dc.contributor.authorWang, JC-
dc.contributor.authorYang, LJ-
dc.contributor.authorSo, SK-
dc.contributor.authorDjurisic, A-
dc.contributor.authorLeung, WWF-
dc.contributor.authorHao, JH-
dc.contributor.authorChan, WK-
dc.contributor.authorSurya, C-
dc.date.accessioned2015-07-21T02:09:12Z-
dc.date.available2015-07-21T02:09:12Z-
dc.date.issued2015-
dc.identifier.citationJournal of Materials Chemistry A, 2015, v. 3 n. 17, p. 9223-9231-
dc.identifier.issn2050-7488-
dc.identifier.urihttp://hdl.handle.net/10722/211725-
dc.languageeng-
dc.publisherThe Royal Society of Chemistry. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/ta#!recentarticles&all-
dc.relation.ispartofJournal of Materials Chemistry A-
dc.titleEfficiency enhancement by defect engineering in perovskite photovoltaic cells prepared using evaporated PbI2/CH3NH3I multilayers-
dc.typeArticle-
dc.identifier.emailDjurisic, A: dalek@hku.hk-
dc.identifier.emailChan, WK: waichan@hku.hk-
dc.identifier.authorityDjurisic, A=rp00690-
dc.identifier.authorityChan, WK=rp00667-
dc.identifier.doi10.1039/C4TA05070C-
dc.identifier.scopuseid_2-s2.0-84928492225-
dc.identifier.hkuros245966-
dc.identifier.volume3-
dc.identifier.issue17-
dc.identifier.spage9223-
dc.identifier.epage9231-
dc.identifier.eissn2050-7496-
dc.identifier.isiWOS:000353420800039-
dc.identifier.issnl2050-7496-

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