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Article: Magnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack

TitleMagnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack
Authors
Issue Date2015
PublisherNature Publishing Group. The Journal's web site is located at http://www.nature.com/srep/index.html
Citation
Scientific Reports, 2015, v. 5, article no. 11369 How to Cite?
AbstractMagnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices.
Persistent Identifierhttp://hdl.handle.net/10722/211905
ISSN
2023 Impact Factor: 3.8
2023 SCImago Journal Rankings: 0.900
PubMed Central ID
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, X-
dc.contributor.authorZhou, Y-
dc.contributor.authorEzawa, M-
dc.contributor.authorZhao, G-
dc.contributor.authorZhao, W-
dc.date.accessioned2015-07-21T02:15:35Z-
dc.date.available2015-07-21T02:15:35Z-
dc.date.issued2015-
dc.identifier.citationScientific Reports, 2015, v. 5, article no. 11369-
dc.identifier.issn2045-2322-
dc.identifier.urihttp://hdl.handle.net/10722/211905-
dc.description.abstractMagnetic skyrmions are localized and topologically protected spin configurations, which are of both fundamental and applied interests for future electronics. In this work, we propose a voltage-gated skyrmion transistor within the well-established framework of micromagnetics. Its operating conditions and processes have been theoretically investigated and demonstrated, in which the gate voltage can be used to switch on/off a circuit. Our results provide the first time guidelines for practical realization of hybrid skyrmionic-electronic devices.-
dc.languageeng-
dc.publisherNature Publishing Group. The Journal's web site is located at http://www.nature.com/srep/index.html-
dc.relation.ispartofScientific Reports-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleMagnetic skyrmion transistor: skyrmion motion in a voltage-gated nanotrack-
dc.typeArticle-
dc.identifier.emailZhang, X: xichaozhang@hku.hk-
dc.identifier.emailZhou, Y: yanzhou@hku.hk-
dc.identifier.authorityZhou, Y=rp01541-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1038/srep11369-
dc.identifier.pmcidPMC4471904-
dc.identifier.scopuseid_2-s2.0-84934975098-
dc.identifier.hkuros244223-
dc.identifier.volume5, article no. 11369-
dc.identifier.isiWOS:000356530500001-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl2045-2322-

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