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Article: Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs

TitleImpact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs
Authors
Gerrer, L.Markov, S.Amoroso, S. M.Adamu-Lema, F.Asenov, A.
Issue Date2012
Citation
Microelectronics Reliability, 2012, v. 52, n. 9-10, p. 1918-1923 How to Cite?
DOI: http://dx.doi.org/10.1016/j.microrel.2012.06.136
AbstractIn this paper we introduce a novel simulation approach for the analysis of statistical variability in the trap-assisted tunnelling (TAT) gate leakage current in ultra-scaled MOSFETs. It accounts for the stochastic nature of trapping/emission dynamics underlying TAT current, and enables the simulation of TAT in the time domain. We demonstrate that random dopant fluctuations induce significant variability in the TAT gate leakage and investigate the details of its origin. Finally we present TAT current characteristics for different dopants configurations. © 2012 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/221321
ISSN
0026-2714
2023 Impact Factor: 1.6
2023 SCImago Journal Rankings: 0.394
ISI Accession Number ID
WOS:000309785400032

 

DC FieldValueLanguage
dc.contributor.authorGerrer, L.-
dc.contributor.authorMarkov, S.-
dc.contributor.authorAmoroso, S. M.-
dc.contributor.authorAdamu-Lema, F.-
dc.contributor.authorAsenov, A.-
dc.date.accessioned2015-11-18T06:08:59Z-
dc.date.available2015-11-18T06:08:59Z-
dc.date.issued2012-
dc.identifier.citationMicroelectronics Reliability, 2012, v. 52, n. 9-10, p. 1918-1923-
dc.identifier.issn0026-2714-
dc.identifier.urihttp://hdl.handle.net/10722/221321-
dc.description.abstractIn this paper we introduce a novel simulation approach for the analysis of statistical variability in the trap-assisted tunnelling (TAT) gate leakage current in ultra-scaled MOSFETs. It accounts for the stochastic nature of trapping/emission dynamics underlying TAT current, and enables the simulation of TAT in the time domain. We demonstrate that random dopant fluctuations induce significant variability in the TAT gate leakage and investigate the details of its origin. Finally we present TAT current characteristics for different dopants configurations. © 2012 Elsevier Ltd. All rights reserved.-
dc.languageeng-
dc.relation.ispartofMicroelectronics Reliability-
dc.titleImpact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.microrel.2012.06.136-
dc.identifier.scopuseid_2-s2.0-84866737894-
dc.identifier.volume52-
dc.identifier.issue9-10-
dc.identifier.spage1918-
dc.identifier.epage1923-
dc.identifier.isiWOS:000309785400032-
dc.identifier.issnl0026-2714-

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