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Conference Paper: A mobility model correction for 'atomistic' drift-diffusion simulation

TitleA mobility model correction for 'atomistic' drift-diffusion simulation
Authors
Amoroso, S. M.Alexander, C. L.Markov, S.Roy, G.Asenov, A.
KeywordsAtomistic Simulation
Mobility Model
Density Gradient
Issue Date2011
Citation
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2011, p. 279-282 How to Cite?
DOI: http://dx.doi.org/10.1109/SISPAD.2011.6035023
AbstractA comprehensive statistical investigation of the increase in resistance associated with charge trapping in 'atomistic' simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the 'atomistic' simulations is proposed to suppress the error related to the fictitious charge trapping. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221324

 

DC FieldValueLanguage
dc.contributor.authorAmoroso, S. M.-
dc.contributor.authorAlexander, C. L.-
dc.contributor.authorMarkov, S.-
dc.contributor.authorRoy, G.-
dc.contributor.authorAsenov, A.-
dc.date.accessioned2015-11-18T06:09:00Z-
dc.date.available2015-11-18T06:09:00Z-
dc.date.issued2011-
dc.identifier.citationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2011, p. 279-282-
dc.identifier.urihttp://hdl.handle.net/10722/221324-
dc.description.abstractA comprehensive statistical investigation of the increase in resistance associated with charge trapping in 'atomistic' simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the 'atomistic' simulations is proposed to suppress the error related to the fictitious charge trapping. © 2011 IEEE.-
dc.languageeng-
dc.relation.ispartofInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD-
dc.subjectAtomistic Simulation-
dc.subjectMobility Model-
dc.subjectDensity Gradient-
dc.titleA mobility model correction for 'atomistic' drift-diffusion simulation-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/SISPAD.2011.6035023-
dc.identifier.scopuseid_2-s2.0-80054978075-
dc.identifier.spage279-
dc.identifier.epage282-

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