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Article: Improved light outcoupling for top-emitting organic light-emitting devices
Title | Improved light outcoupling for top-emitting organic light-emitting devices |
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Authors | |
Issue Date | 2006 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2006, v. 89 n. 4, article no. 043505 How to Cite? |
Abstract | Light outcoupling for the top-emitting organic light-emitting device (TEOLED) with the structure of Si/SiO2/Ag/Ag2O/4,4′, 4″-tris(3-methylphenylphenylamino)triphenylamine/4, 4′-bis[N-(1- naphthyl-1-)-N-phenyl-amino]-biphenyl/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al/Ag is improved by optimizing the semitransparent Al/Ag cathode and employing a ZnS top-capping layer. To both provide a fine electron injection and reduce Al absorption in the visible area, Al thickness is adjusted to 0.3 nm. With another 32-nm-thick ZnS film as a refractive index-matching layer onto the optimized Al (0.3 nm)/Ag (18 nm) electrode, the maximum luminance and efficiency for the TEOLED based on Alq3 emission reach 145 474 cd/m2 (13 V) and 12.2 cd/A (5 V), respectively. © 2006 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/225874 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, Shufen | - |
dc.contributor.author | Jie, Zhonghai | - |
dc.contributor.author | Zhao, Zhenyuan | - |
dc.contributor.author | Cheng, Gang | - |
dc.contributor.author | Wu, Zhijun | - |
dc.contributor.author | Zhao, Yi | - |
dc.contributor.author | Quan, Baofu | - |
dc.contributor.author | Liu, Shiyong | - |
dc.contributor.author | Li, Xue | - |
dc.contributor.author | Xie, Wenfa | - |
dc.date.accessioned | 2016-05-23T02:22:01Z | - |
dc.date.available | 2016-05-23T02:22:01Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | Applied Physics Letters, 2006, v. 89 n. 4, article no. 043505 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/225874 | - |
dc.description.abstract | Light outcoupling for the top-emitting organic light-emitting device (TEOLED) with the structure of Si/SiO2/Ag/Ag2O/4,4′, 4″-tris(3-methylphenylphenylamino)triphenylamine/4, 4′-bis[N-(1- naphthyl-1-)-N-phenyl-amino]-biphenyl/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al/Ag is improved by optimizing the semitransparent Al/Ag cathode and employing a ZnS top-capping layer. To both provide a fine electron injection and reduce Al absorption in the visible area, Al thickness is adjusted to 0.3 nm. With another 32-nm-thick ZnS film as a refractive index-matching layer onto the optimized Al (0.3 nm)/Ag (18 nm) electrode, the maximum luminance and efficiency for the TEOLED based on Alq3 emission reach 145 474 cd/m2 (13 V) and 12.2 cd/A (5 V), respectively. © 2006 American Institute of Physics. | - |
dc.language | eng | - |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Improved light outcoupling for top-emitting organic light-emitting devices | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.2236224 | - |
dc.identifier.scopus | eid_2-s2.0-33746626097 | - |
dc.identifier.volume | 89 | - |
dc.identifier.issue | 4 | - |
dc.identifier.spage | article no. 043505 | - |
dc.identifier.epage | article no. 043505 | - |
dc.identifier.isi | WOS:000239376500122 | - |
dc.identifier.issnl | 0003-6951 | - |