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Article: A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances

TitleA Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances
Authors
Hong, YHPoon, CTYam, VWW
Issue Date2016
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jacsat/index.html
Citation
Journal of the American Chemical Society, 2016, v. 138 n. 20, p. 6368-6371 How to Cite?
DOI: http://dx.doi.org/10.1021/jacs.6b02629
AbstractA novel class of luminescent phosphole oxide-containing alkynylgold(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/10^3/10^7, and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds.
Persistent Identifierhttp://hdl.handle.net/10722/229123
ISSN
0002-7863
2023 Impact Factor: 14.4
2023 SCImago Journal Rankings: 5.489
ISI Accession Number ID
WOS:000376825900013

 

DC FieldValueLanguage
dc.contributor.authorHong, YH-
dc.contributor.authorPoon, CT-
dc.contributor.authorYam, VWW-
dc.date.accessioned2016-08-23T14:09:08Z-
dc.date.available2016-08-23T14:09:08Z-
dc.date.issued2016-
dc.identifier.citationJournal of the American Chemical Society, 2016, v. 138 n. 20, p. 6368-6371-
dc.identifier.issn0002-7863-
dc.identifier.urihttp://hdl.handle.net/10722/229123-
dc.description.abstractA novel class of luminescent phosphole oxide-containing alkynylgold(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/10^3/10^7, and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/jacsat/index.html-
dc.relation.ispartofJournal of the American Chemical Society-
dc.titleA Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances-
dc.typeArticle-
dc.identifier.emailHong, YH: ehongra@hku.hk-
dc.identifier.emailPoon, CT: nelpchem@HKUCC-COM.hku.hk-
dc.identifier.emailYam, VWW: wwyam@hku.hk-
dc.identifier.authorityYam, VWW=rp00822-
dc.identifier.doi10.1021/jacs.6b02629-
dc.identifier.scopuseid_2-s2.0-84971378799-
dc.identifier.hkuros260965-
dc.identifier.volume138-
dc.identifier.issue20-
dc.identifier.spage6368-
dc.identifier.epage6371-
dc.identifier.isiWOS:000376825900013-
dc.publisher.placeUnited States-
dc.identifier.issnl0002-7863-

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