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Article: Complementary Skyrmion Racetrack Memory With Voltage Manipulation

TitleComplementary Skyrmion Racetrack Memory With Voltage Manipulation
Authors
Keywordsdomain wall
Magnetic skyrmion
racetrack memory
voltage manipulation
Issue Date2016
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2016, v. 37 n. 7, p. 924-927 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/229391
ISSN
2022 Impact Factor: 4.9
2020 SCImago Journal Rankings: 1.337
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorKang, W-
dc.contributor.authorZheng, C-
dc.contributor.authorHuang, Y-
dc.contributor.authorZhang, X-
dc.contributor.authorZhou, Y-
dc.contributor.authorLv, W-
dc.contributor.authorZhao, W-
dc.date.accessioned2016-08-23T14:10:52Z-
dc.date.available2016-08-23T14:10:52Z-
dc.date.issued2016-
dc.identifier.citationIEEE Electron Device Letters, 2016, v. 37 n. 7, p. 924-927-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/229391-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55-
dc.relation.ispartofIEEE Electron Device Letters-
dc.rights©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectdomain wall-
dc.subjectMagnetic skyrmion-
dc.subjectracetrack memory-
dc.subjectvoltage manipulation-
dc.titleComplementary Skyrmion Racetrack Memory With Voltage Manipulation-
dc.typeArticle-
dc.identifier.emailZhang, X: xichaozhang@hku.hk-
dc.identifier.emailZhou, Y: yanzhou@hku.hk-
dc.identifier.authorityZhou, Y=rp01541-
dc.description.naturepostprint-
dc.identifier.doi10.1109/LED.2016.2574916-
dc.identifier.scopuseid_2-s2.0-84976873336-
dc.identifier.hkuros261742-
dc.identifier.volume37-
dc.identifier.issue7-
dc.identifier.spage924-
dc.identifier.epage927-
dc.identifier.isiWOS:000379940600027-
dc.publisher.placeUnited States-
dc.identifier.issnl0741-3106-

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