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- Publisher Website: 10.1109/SISPAD.2015.7292257
- Scopus: eid_2-s2.0-84959373228
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Conference Paper: Dielectric material for monolayer black phosphorus transistors: A first-principles investigation
Title | Dielectric material for monolayer black phosphorus transistors: A first-principles investigation |
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Authors | |
Keywords | dielectric material first principles calculation Black phosphorus |
Issue Date | 2015 |
Citation | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2015, v. 2015-October, p. 56-59 How to Cite? |
Abstract | © 2015 IEEE.Using advanced parameter-free first-principles calculations, we suggested that corundum (a-Al2O3) is a promising candidate of the dielectric materials for monolayer black-phosphorus (BP). Hydrogen passivated Al2O3 is preferred to avoid metallization with monolayer BP. Clean interface is found between monolayer BP and H-terminated Al2O3. The valence-band offset for these systems is around 0.9eV, which is appropriate to create a reasonable carrier injection barrier. Moreover, orientation effect is found to be of great significance for these systems. Special orientation can generate an indirect band gap for monolayer BP. |
Persistent Identifier | http://hdl.handle.net/10722/236616 |
DC Field | Value | Language |
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dc.contributor.author | Shi, Qing | - |
dc.contributor.author | Guo, Hong | - |
dc.contributor.author | Liu, Fei | - |
dc.date.accessioned | 2016-12-01T09:08:25Z | - |
dc.date.available | 2016-12-01T09:08:25Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2015, v. 2015-October, p. 56-59 | - |
dc.identifier.uri | http://hdl.handle.net/10722/236616 | - |
dc.description.abstract | © 2015 IEEE.Using advanced parameter-free first-principles calculations, we suggested that corundum (a-Al2O3) is a promising candidate of the dielectric materials for monolayer black-phosphorus (BP). Hydrogen passivated Al2O3 is preferred to avoid metallization with monolayer BP. Clean interface is found between monolayer BP and H-terminated Al2O3. The valence-band offset for these systems is around 0.9eV, which is appropriate to create a reasonable carrier injection barrier. Moreover, orientation effect is found to be of great significance for these systems. Special orientation can generate an indirect band gap for monolayer BP. | - |
dc.language | eng | - |
dc.relation.ispartof | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | - |
dc.subject | dielectric material | - |
dc.subject | first principles calculation | - |
dc.subject | Black phosphorus | - |
dc.title | Dielectric material for monolayer black phosphorus transistors: A first-principles investigation | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/SISPAD.2015.7292257 | - |
dc.identifier.scopus | eid_2-s2.0-84959373228 | - |
dc.identifier.volume | 2015-October | - |
dc.identifier.spage | 56 | - |
dc.identifier.epage | 59 | - |