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Conference Paper: Dielectric material for monolayer black phosphorus transistors: A first-principles investigation

TitleDielectric material for monolayer black phosphorus transistors: A first-principles investigation
Authors
Shi, QingGuo, HongLiu, Fei
Keywordsdielectric material
first principles calculation
Black phosphorus
Issue Date2015
Citation
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2015, v. 2015-October, p. 56-59 How to Cite?
DOI: http://dx.doi.org/10.1109/SISPAD.2015.7292257
Abstract© 2015 IEEE.Using advanced parameter-free first-principles calculations, we suggested that corundum (a-Al2O3) is a promising candidate of the dielectric materials for monolayer black-phosphorus (BP). Hydrogen passivated Al2O3 is preferred to avoid metallization with monolayer BP. Clean interface is found between monolayer BP and H-terminated Al2O3. The valence-band offset for these systems is around 0.9eV, which is appropriate to create a reasonable carrier injection barrier. Moreover, orientation effect is found to be of great significance for these systems. Special orientation can generate an indirect band gap for monolayer BP.
Persistent Identifierhttp://hdl.handle.net/10722/236616

 

DC FieldValueLanguage
dc.contributor.authorShi, Qing-
dc.contributor.authorGuo, Hong-
dc.contributor.authorLiu, Fei-
dc.date.accessioned2016-12-01T09:08:25Z-
dc.date.available2016-12-01T09:08:25Z-
dc.date.issued2015-
dc.identifier.citationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2015, v. 2015-October, p. 56-59-
dc.identifier.urihttp://hdl.handle.net/10722/236616-
dc.description.abstract© 2015 IEEE.Using advanced parameter-free first-principles calculations, we suggested that corundum (a-Al2O3) is a promising candidate of the dielectric materials for monolayer black-phosphorus (BP). Hydrogen passivated Al2O3 is preferred to avoid metallization with monolayer BP. Clean interface is found between monolayer BP and H-terminated Al2O3. The valence-band offset for these systems is around 0.9eV, which is appropriate to create a reasonable carrier injection barrier. Moreover, orientation effect is found to be of great significance for these systems. Special orientation can generate an indirect band gap for monolayer BP.-
dc.languageeng-
dc.relation.ispartofInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD-
dc.subjectdielectric material-
dc.subjectfirst principles calculation-
dc.subjectBlack phosphorus-
dc.titleDielectric material for monolayer black phosphorus transistors: A first-principles investigation-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/SISPAD.2015.7292257-
dc.identifier.scopuseid_2-s2.0-84959373228-
dc.identifier.volume2015-October-
dc.identifier.spage56-
dc.identifier.epage59-

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