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- Publisher Website: 10.1088/0957-4484/26/17/175201
- Scopus: eid_2-s2.0-84926472340
- WOS: WOS:000353110200003
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Article: Negative differential resistance in monolayer WTe2 tunneling transistors
Title | Negative differential resistance in monolayer WTe<inf>2</inf> tunneling transistors |
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Authors | |
Keywords | Tunneling field effect transistors Negative differential resistance Transition metal dichalcogenide |
Issue Date | 2015 |
Citation | Nanotechnology, 2015, v. 26, n. 17, p. 1-5 How to Cite? |
Abstract | © 2015 IOP Publishing Ltd.We report theoretical investigations of quantum transport in monolayer transition metal dichalcogenide (TMDC) tunneling field effect transistors (TFETs). Due to the specific electronic structure of TMDC WTe2 , a transmission valley is found in the conduction band (CB). For a proper choice of the doping, gate and supply voltages the WTe 2 TFET can produce a giant negative differential resistance (NDR) with a peak to valley ratio as large as 103. The mechanism of NDR is identified to be due to a transport-mode bottleneck, i.e., the band to band tunneling from the valence band of the source is partially blocked by a transmission valley of the CB of the drain. More generally, our calculations show that electronic structures of at least six TMDC materials possess the transmission valley. |
Persistent Identifier | http://hdl.handle.net/10722/236692 |
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.631 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Liu, Fei | - |
dc.contributor.author | Wang, Jian | - |
dc.contributor.author | Guo, Hong | - |
dc.date.accessioned | 2016-12-01T09:08:37Z | - |
dc.date.available | 2016-12-01T09:08:37Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | Nanotechnology, 2015, v. 26, n. 17, p. 1-5 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | http://hdl.handle.net/10722/236692 | - |
dc.description.abstract | © 2015 IOP Publishing Ltd.We report theoretical investigations of quantum transport in monolayer transition metal dichalcogenide (TMDC) tunneling field effect transistors (TFETs). Due to the specific electronic structure of TMDC WTe2 , a transmission valley is found in the conduction band (CB). For a proper choice of the doping, gate and supply voltages the WTe 2 TFET can produce a giant negative differential resistance (NDR) with a peak to valley ratio as large as 103. The mechanism of NDR is identified to be due to a transport-mode bottleneck, i.e., the band to band tunneling from the valence band of the source is partially blocked by a transmission valley of the CB of the drain. More generally, our calculations show that electronic structures of at least six TMDC materials possess the transmission valley. | - |
dc.language | eng | - |
dc.relation.ispartof | Nanotechnology | - |
dc.subject | Tunneling field effect transistors | - |
dc.subject | Negative differential resistance | - |
dc.subject | Transition metal dichalcogenide | - |
dc.title | Negative differential resistance in monolayer WTe<inf>2</inf> tunneling transistors | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1088/0957-4484/26/17/175201 | - |
dc.identifier.scopus | eid_2-s2.0-84926472340 | - |
dc.identifier.hkuros | 245982 | - |
dc.identifier.volume | 26 | - |
dc.identifier.issue | 17 | - |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 5 | - |
dc.identifier.eissn | 1361-6528 | - |
dc.identifier.isi | WOS:000353110200003 | - |
dc.identifier.issnl | 0957-4484 | - |