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Patent History
- ApplicationUS 12/4831300 2015-08-20
- GrantedUS 20160233269 2016-08-11
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granted patent: FLEXIBLE GAN LIGHT-EMITTING DIODES
Title | FLEXIBLE GAN LIGHT-EMITTING DIODES |
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Granted Patent | US 20160233269 |
Granted Date | 2016-08-11 |
Priority Date | 2015-08-20 US 12/4831300 2014-08-21 US 12/2040253P |
Inventors | |
Issue Date | 2016 |
Citation | US Patent US 20160233269. Washington, DC: US Patent and Trademark Office (USPTO), 2016 How to Cite? |
Abstract | Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate. |
Persistent Identifier | http://hdl.handle.net/10722/237294 |
DC Field | Value | Language |
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dc.date.accessioned | 2016-12-29T01:51:02Z | - |
dc.date.available | 2016-12-29T01:51:02Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | US Patent US 20160233269. Washington, DC: US Patent and Trademark Office (USPTO), 2016 | - |
dc.identifier.uri | http://hdl.handle.net/10722/237294 | - |
dc.description.abstract | Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate. | - |
dc.title | FLEXIBLE GAN LIGHT-EMITTING DIODES | - |
dc.type | Patent | - |
dc.identifier.authority | Choi Hoi Wai=rp00108 | - |
dc.identifier.authority | Li Kwai Hei=rp02142 | - |
dc.description.nature | published_or_final_version | - |
dc.contributor.inventor | Choi Hoi Wai | - |
dc.contributor.inventor | Li Kwai Hei | - |
dc.contributor.inventor | Cheung Yuk Fai | - |
patents.identifier.application | US 12/4831300 | - |
patents.identifier.granted | US 20160233269 | - |
patents.description.assignee | THE UNIV OF HONG KONG [CN] | - |
patents.description.country | United States of America | - |
patents.date.granted | 2016-08-11 | - |
patents.identifier.hkutechid | EEE-2014-00539-1 | - |
patents.date.application | 2015-08-20 | - |
patents.date.priority | 2015-08-20 US 12/4831300 | - |
patents.date.priority | 2014-08-21 US 12/2040253P | - |
patents.description.cc | us | - |
patents.description.kind | A1 | - |
patents.type | Patent_granted | - |