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Article: Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy
Title | Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy |
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Authors | |
Keywords | High-index Bi2Se3 Strain Topological insulator Heterostructure Molecular-beam epitaxy |
Issue Date | 2017 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc |
Citation | Applied Surface Science, 2017, v. 396, p. 1825-1830 How to Cite? |
Abstract | High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems. |
Persistent Identifier | http://hdl.handle.net/10722/237782 |
ISSN | 2023 Impact Factor: 6.3 2023 SCImago Journal Rankings: 1.210 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Li, B | - |
dc.contributor.author | Chen, WG | - |
dc.contributor.author | Guo, X | - |
dc.contributor.author | Ho, WK | - |
dc.contributor.author | Dai, XQ | - |
dc.contributor.author | Jia, JF | - |
dc.contributor.author | Xie, MH | - |
dc.date.accessioned | 2017-01-20T02:28:36Z | - |
dc.date.available | 2017-01-20T02:28:36Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Applied Surface Science, 2017, v. 396, p. 1825-1830 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/10722/237782 | - |
dc.description.abstract | High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems. | - |
dc.language | eng | - |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc | - |
dc.relation.ispartof | Applied Surface Science | - |
dc.subject | High-index Bi2Se3 | - |
dc.subject | Strain | - |
dc.subject | Topological insulator | - |
dc.subject | Heterostructure | - |
dc.subject | Molecular-beam epitaxy | - |
dc.title | Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy | - |
dc.type | Article | - |
dc.identifier.email | Li, B: silasph@hku.hk | - |
dc.identifier.email | Ho, WK: howk@hku.hk | - |
dc.identifier.email | Xie, MH: mhxie@hku.hk | - |
dc.identifier.authority | Xie, MH=rp00818 | - |
dc.description.nature | preprint | - |
dc.identifier.doi | 10.1016/j.apsusc.2016.11.189 | - |
dc.identifier.scopus | eid_2-s2.0-85006699800 | - |
dc.identifier.hkuros | 270969 | - |
dc.identifier.volume | 396 | - |
dc.identifier.spage | 1825 | - |
dc.identifier.epage | 1830 | - |
dc.identifier.isi | WOS:000391418200075 | - |
dc.publisher.place | Netherlands | - |
dc.identifier.issnl | 0169-4332 | - |