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Article: Crystal Engineering for Low Defect Density and High Efficiency Hybrid Chemical Vapor Deposition Grown Perovskite Solar Cells

TitleCrystal Engineering for Low Defect Density and High Efficiency Hybrid Chemical Vapor Deposition Grown Perovskite Solar Cells
Authors
Ng, ARen, ZWShen, QCheung, SHGokkaya, HCSo, SKDjurisic, AWan, YYWu, XJSurya, C
Keywordscooling rates
crystallization
defects
growth ambient
hybrid chemical vapor deposition
passivation
perovskites
solar cells
Issue Date2016
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick
Citation
ACS Applied Materials & Interfaces, 2016, v. 8 n. 48, p. 32805-32814 How to Cite?
DOI: http://dx.doi.org/10.1021/acsami.6b07513
Persistent Identifierhttp://hdl.handle.net/10722/238713
ISSN
1944-8244
2023 Impact Factor: 8.3
2023 SCImago Journal Rankings: 2.058
ISI Accession Number ID
WOS:000389624600021

 

DC FieldValueLanguage
dc.contributor.authorNg, A-
dc.contributor.authorRen, ZW-
dc.contributor.authorShen, Q-
dc.contributor.authorCheung, SH-
dc.contributor.authorGokkaya, HC-
dc.contributor.authorSo, SK-
dc.contributor.authorDjurisic, A-
dc.contributor.authorWan, YY-
dc.contributor.authorWu, XJ-
dc.contributor.authorSurya, C-
dc.date.accessioned2017-02-20T01:25:03Z-
dc.date.available2017-02-20T01:25:03Z-
dc.date.issued2016-
dc.identifier.citationACS Applied Materials & Interfaces, 2016, v. 8 n. 48, p. 32805-32814-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10722/238713-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick-
dc.relation.ispartofACS Applied Materials & Interfaces-
dc.subjectcooling rates-
dc.subjectcrystallization-
dc.subjectdefects-
dc.subjectgrowth ambient-
dc.subjecthybrid chemical vapor deposition-
dc.subjectpassivation-
dc.subjectperovskites-
dc.subjectsolar cells-
dc.titleCrystal Engineering for Low Defect Density and High Efficiency Hybrid Chemical Vapor Deposition Grown Perovskite Solar Cells-
dc.typeArticle-
dc.identifier.emailDjurisic, A: dalek@hku.hk-
dc.identifier.authorityDjurisic, A=rp00690-
dc.identifier.doi10.1021/acsami.6b07513-
dc.identifier.scopuseid_2-s2.0-85002993928-
dc.identifier.hkuros271337-
dc.identifier.volume8-
dc.identifier.issue48-
dc.identifier.spage32805-
dc.identifier.epage32814-
dc.identifier.eissn1944-8252-
dc.identifier.isiWOS:000389624600021-
dc.identifier.issnl1944-8244-

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