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Conference Paper: Device Modelling from Atoms to Transistor: including the gate oxide
Title | Device Modelling from Atoms to Transistor: including the gate oxide |
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Authors | |
Issue Date | 2016 |
Citation | The 19th Annual Conference of The Physical Society of Hong Kong, The University of Hong Kong, Hong Kong, 3-4 June 2016 How to Cite? |
Description | Invited speaker - Session 2.4 Device Physics and Related |
Persistent Identifier | http://hdl.handle.net/10722/239865 |
DC Field | Value | Language |
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dc.contributor.author | Markov, SN | - |
dc.date.accessioned | 2017-04-06T09:14:06Z | - |
dc.date.available | 2017-04-06T09:14:06Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | The 19th Annual Conference of The Physical Society of Hong Kong, The University of Hong Kong, Hong Kong, 3-4 June 2016 | - |
dc.identifier.uri | http://hdl.handle.net/10722/239865 | - |
dc.description | Invited speaker - Session 2.4 Device Physics and Related | - |
dc.language | eng | - |
dc.relation.ispartof | Annual Conference of The Physical Society of Hong Kong | - |
dc.title | Device Modelling from Atoms to Transistor: including the gate oxide | - |
dc.type | Conference_Paper | - |
dc.identifier.email | Markov, SN: figaro@hku.hk | - |
dc.identifier.authority | Markov, SN=rp02107 | - |
dc.identifier.hkuros | 267311 | - |