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Conference Paper: Device Modelling from Atom to Transistor: including the gate oxide

TitleDevice Modelling from Atom to Transistor: including the gate oxide
Authors
Markov, SN
Issue Date2016
Citation
1st Australian Symposium on Computationally Enhanced Materials Design, 4-6 July 2016 Sydney How to Cite?
DescriptionTutorial Lectures on DFTB
Persistent Identifierhttp://hdl.handle.net/10722/239866

 

DC FieldValueLanguage
dc.contributor.authorMarkov, SN-
dc.date.accessioned2017-04-06T09:23:33Z-
dc.date.available2017-04-06T09:23:33Z-
dc.date.issued2016-
dc.identifier.citation1st Australian Symposium on Computationally Enhanced Materials Design, 4-6 July 2016 Sydney-
dc.identifier.urihttp://hdl.handle.net/10722/239866-
dc.descriptionTutorial Lectures on DFTB-
dc.languageeng-
dc.relation.ispartofAustralian Symposium on Computationally Enhanced Materials Design (ACEMD), 2016-
dc.titleDevice Modelling from Atom to Transistor: including the gate oxide-
dc.typeConference_Paper-
dc.identifier.emailMarkov, SN: figaro@hku.hk-
dc.identifier.authorityMarkov, SN=rp02107-
dc.identifier.hkuros267312-

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