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Conference Paper: Luminescence imaging and blinking behavior of individual InGaN nanoclusters formed in GaN matrix

TitleLuminescence imaging and blinking behavior of individual InGaN nanoclusters formed in GaN matrix
Authors
Issue Date2010
PublisherElectromagnetics Academy.
Citation
The 28th Progress In Electromagnetics Research Symposium Abstracts, Cambridge, USA, 5-8 July 2010. In PIERS 2010 in Cambridge Abstracts, p. 182 How to Cite?
AbstractIn this talk, we report an observation of luminescence imaging and blinking behavior of single indium rich nanoclusters spontaneously formed inside GaN matrix. At room temperature, light emissions from individual nanoclusters have been spatially and spectrally detected using scanning confocal micro-Raman microscopy/spectroscopy system. Under the continuous excitation of continuous-wave laser, spectral jump and intensity intermittence of light emissions from these individual nanostructures inside solid state environment have been interestingly observed. The 'on' and 'off' events in the light emission of individual InGaN nanoclusters have been monitored as a function of time. In order to understand physical mechanism of the blinking behavior, statistical analysis of both 'on' and 'off' time durations has been performed.
DescriptionSession 1P5: Optical Properties of Semiconductors and Nanostructures 2
Persistent Identifierhttp://hdl.handle.net/10722/240857
ISSN

 

DC FieldValueLanguage
dc.contributor.authorXu, SJ-
dc.contributor.authorZhao, DG-
dc.contributor.authorYang, H-
dc.date.accessioned2017-05-22T08:26:06Z-
dc.date.available2017-05-22T08:26:06Z-
dc.date.issued2010-
dc.identifier.citationThe 28th Progress In Electromagnetics Research Symposium Abstracts, Cambridge, USA, 5-8 July 2010. In PIERS 2010 in Cambridge Abstracts, p. 182-
dc.identifier.issn1559-9450-
dc.identifier.urihttp://hdl.handle.net/10722/240857-
dc.descriptionSession 1P5: Optical Properties of Semiconductors and Nanostructures 2-
dc.description.abstractIn this talk, we report an observation of luminescence imaging and blinking behavior of single indium rich nanoclusters spontaneously formed inside GaN matrix. At room temperature, light emissions from individual nanoclusters have been spatially and spectrally detected using scanning confocal micro-Raman microscopy/spectroscopy system. Under the continuous excitation of continuous-wave laser, spectral jump and intensity intermittence of light emissions from these individual nanostructures inside solid state environment have been interestingly observed. The 'on' and 'off' events in the light emission of individual InGaN nanoclusters have been monitored as a function of time. In order to understand physical mechanism of the blinking behavior, statistical analysis of both 'on' and 'off' time durations has been performed. -
dc.languageeng-
dc.publisherElectromagnetics Academy. -
dc.relation.ispartofProgress in Electromagnetics Research Symposium Abstracts-
dc.titleLuminescence imaging and blinking behavior of individual InGaN nanoclusters formed in GaN matrix-
dc.typeConference_Paper-
dc.identifier.emailXu, SJ: sjxu@hkucc.hku.hk-
dc.identifier.authorityXu, SJ=rp00821-
dc.identifier.hkuros181241-
dc.identifier.spage182-
dc.identifier.epage182-
dc.publisher.placeUnited States-
dc.identifier.issnl1559-9450-

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