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Article: Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires

TitleInvestigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires
Authors
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2016, v. 109 n. 14, article no. 143904, p. 1-5 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/242496
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhou, GD-
dc.contributor.authorSun, B-
dc.contributor.authorYao, YQ-
dc.contributor.authorhang, HH-
dc.contributor.authorZhou, AK-
dc.contributor.authorAlameh, K-
dc.contributor.authorDing, BF-
dc.contributor.authorSong, QL-
dc.date.accessioned2017-07-24T01:40:32Z-
dc.date.available2017-07-24T01:40:32Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 109 n. 14, article no. 143904, p. 1-5-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/242496-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2016, v. 109 n. 14, article no. 143904, p. 1-5 and may be found at https://doi.org/10.1063/1.4962655-
dc.titleInvestigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4962655-
dc.identifier.scopuseid_2-s2.0-84990818426-
dc.identifier.hkuros273273-
dc.identifier.volume109-
dc.identifier.issue14-
dc.identifier.spagearticle no. 143904, p. 1-
dc.identifier.epagearticle no. 143904, p. 5-
dc.identifier.isiWOS:000386152800074-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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