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Article: Electronic transitions of tantalum monofluoride

TitleElectronic transitions of tantalum monofluoride
Authors
Issue Date2017
PublisherAIP Publishing LLC. The Journal's web site is located at https://aip.scitation.org/journal/jcp
Citation
Journal of Chemical Physics, 2017, v. 146 n. 9, article no. 094308 How to Cite?
AbstractThe electronic transition spectrum of the tantalum monofluoride (TaF) molecule in the spectral region between 448 and 560 nm has been studied using the technique of laser-ablation/reaction free jet expansion and laser induced fluorescence spectroscopy. The TaF molecule was produced by reacting laser-ablated tantalum atoms with sulfur hexafluoride gas seeded in argon. Twenty-two vibrational bands with resolved rotational structure have been recorded and analyzed, which were organized into seven electronic transitions. The X3Σ−(0+) state has been identified to be the ground state and the determined equilibrium bond length, re, and vibrational frequency, ωe, are 1.8184 Å and 700.1 cm−1, respectively. The low-lying Λ-S states and Ω sub-states of TaF were also theoretically studied at the MRCISD+Q level of theory with spin-orbit coupling. The Ω = 0+ and 2 sub-states from the Σ−3 and Φ3 state have been found to be the ground and the first excited states, respectively, which agrees well with our experimental determinations. This work represents the first experimental investigation of the molecular structure of the TaF molecule.
Persistent Identifierhttp://hdl.handle.net/10722/247274
ISSN
2021 Impact Factor: 4.304
2020 SCImago Journal Rankings: 1.071
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorNg, KF-
dc.contributor.authorZou, W-
dc.contributor.authorLiu, W-
dc.contributor.authorCheung, ASC-
dc.date.accessioned2017-10-18T08:24:53Z-
dc.date.available2017-10-18T08:24:53Z-
dc.date.issued2017-
dc.identifier.citationJournal of Chemical Physics, 2017, v. 146 n. 9, article no. 094308-
dc.identifier.issn0021-9606-
dc.identifier.urihttp://hdl.handle.net/10722/247274-
dc.description.abstractThe electronic transition spectrum of the tantalum monofluoride (TaF) molecule in the spectral region between 448 and 560 nm has been studied using the technique of laser-ablation/reaction free jet expansion and laser induced fluorescence spectroscopy. The TaF molecule was produced by reacting laser-ablated tantalum atoms with sulfur hexafluoride gas seeded in argon. Twenty-two vibrational bands with resolved rotational structure have been recorded and analyzed, which were organized into seven electronic transitions. The X3Σ−(0+) state has been identified to be the ground state and the determined equilibrium bond length, re, and vibrational frequency, ωe, are 1.8184 Å and 700.1 cm−1, respectively. The low-lying Λ-S states and Ω sub-states of TaF were also theoretically studied at the MRCISD+Q level of theory with spin-orbit coupling. The Ω = 0+ and 2 sub-states from the Σ−3 and Φ3 state have been found to be the ground and the first excited states, respectively, which agrees well with our experimental determinations. This work represents the first experimental investigation of the molecular structure of the TaF molecule.-
dc.languageeng-
dc.publisherAIP Publishing LLC. The Journal's web site is located at https://aip.scitation.org/journal/jcp-
dc.relation.ispartofJournal of Chemical Physics-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Chemical Physics, 2017, v. 146 n. 9, article no. 094308 and may be found at https://doi.org/10.1063/1.4977215-
dc.titleElectronic transitions of tantalum monofluoride-
dc.typeArticle-
dc.identifier.emailCheung, ASC: hrsccsc@hkucc.hku.hk-
dc.identifier.authorityCheung, ASC=rp00676-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4977215-
dc.identifier.scopuseid_2-s2.0-85014425284-
dc.identifier.hkuros281321-
dc.identifier.volume146-
dc.identifier.issue9-
dc.identifier.spagearticle no. 094308-
dc.identifier.epagearticle no. 094308-
dc.identifier.isiWOS:000397312800050-
dc.publisher.placeUnited States-
dc.identifier.issnl0021-9606-

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