Nanotexturing Effects in GAN/INGAN Multi-Quantum-Wells LED Planar Structures

Abstract

Conventional 2D GaN/InGaN multi-quantum-wells LED planar structures were nanotextured into quasi-1D nanopillars with two “top-down” approaches of self-assembled Ni nanoislands mask+dry etching and direct focused ion beam milling. Such nanotexturing effects on the optical properties of the nanopillars were investigated in detail with confocal micro-Raman microscopy and precise photoluminescence spectroscopy. Two main nanotexturing effects, namely greatly altered light scattering (i.e., appearance of new surface optical vibration mode) and light emission (i.e., strongly enhanced internal quantum efficiency), have been demonstrated. In this chapter, we aim to give a comprehensive review and summary of the nanotexturing effects in GaN/InGaN multiquantum-wells LED planar structures. Further investigation suggestions and prospective are also briefly discussed.