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Conference Paper: Zn-monovacancy and Zn-O-divacancy in pulsed laser deposition grown ZnO on sapphire

TitleZn-monovacancy and Zn-O-divacancy in pulsed laser deposition grown ZnO on sapphire
Authors
Luo, CWang, ZAnwand, WWagner, ALing, FCC
Issue Date2017
Citation
The 29th International Conference on Defects in Semiconductors, Matsue, Japan, 31 July-4 August 2017, p. 1-2 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/253872

 

DC FieldValueLanguage
dc.contributor.authorLuo, C-
dc.contributor.authorWang, Z-
dc.contributor.authorAnwand, W-
dc.contributor.authorWagner, A-
dc.contributor.authorLing, FCC-
dc.date.accessioned2018-05-30T08:32:12Z-
dc.date.available2018-05-30T08:32:12Z-
dc.date.issued2017-
dc.identifier.citationThe 29th International Conference on Defects in Semiconductors, Matsue, Japan, 31 July-4 August 2017, p. 1-2-
dc.identifier.urihttp://hdl.handle.net/10722/253872-
dc.languageeng-
dc.relation.ispartofInternational Conference on Defects in Semiconductors-
dc.titleZn-monovacancy and Zn-O-divacancy in pulsed laser deposition grown ZnO on sapphire-
dc.typeConference_Paper-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.identifier.hkuros278703-
dc.identifier.spage1-
dc.identifier.epage2-
dc.publisher.placeMatsue, Japan-

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