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Article: Robust spin-valley polarization in commensurate Mo S2 /graphene heterostructures

TitleRobust spin-valley polarization in commensurate Mo S2 /graphene heterostructures
Authors
Issue Date2018
PublisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prb/
Citation
Physical Review B: covering condensed matter and materials physics, 2018, v. 97 n. 11, article no. 115445 How to Cite?
Abstract© 2018 American Physical Society. The investigation and control of quantum degrees of freedom (DoFs) of carriers lie at the heart of condensed-matter physics and next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining the superior properties of individual 2D materials and manipulating spin, layer, and valley DoFs. MoS2/graphene heterostructures, harboring prominent spin-transport properties of graphene, giant spin-orbit coupling, and spin-valley polarization of MoS2, are predicted as a perfect venue for optospintronics. Here, we report the epitaxial growth of commensurate MoS2 on graphene with high quality by chemical vapor deposition, and demonstrate robust temperature-independent spin-valley polarization at off-resonant excitation. We further show that the helicity of B exciton is larger than that of A exciton, allowing the manipulation of spin bits in the commensurate heterostructures by both optical helicity and wavelength. Our results open a window for controlling spin DoF by light and pave a way for taking spin qubits as information carriers in the next-generation valley-controlled optospintronics.
Persistent Identifierhttp://hdl.handle.net/10722/254489
ISSN
2020 Impact Factor: 4.036
2020 SCImago Journal Rankings: 1.780
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, Qingming-
dc.contributor.authorDu, Luojun-
dc.contributor.authorZhang, Qian-
dc.contributor.authorGong, Benchao-
dc.contributor.authorLiao, Mengzhou-
dc.contributor.authorZhu, Jianqi-
dc.contributor.authorYu, Hua-
dc.contributor.authorHe, Rui-
dc.contributor.authorLiu, Kai-
dc.contributor.authorYang, Rong-
dc.contributor.authorShi, Dongxia-
dc.contributor.authorGu, Lin-
dc.contributor.authorYan, Feng-
dc.contributor.authorZhang, Guangyu-
dc.date.accessioned2018-06-19T15:40:42Z-
dc.date.available2018-06-19T15:40:42Z-
dc.date.issued2018-
dc.identifier.citationPhysical Review B: covering condensed matter and materials physics, 2018, v. 97 n. 11, article no. 115445-
dc.identifier.issn2469-9950-
dc.identifier.urihttp://hdl.handle.net/10722/254489-
dc.description.abstract© 2018 American Physical Society. The investigation and control of quantum degrees of freedom (DoFs) of carriers lie at the heart of condensed-matter physics and next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining the superior properties of individual 2D materials and manipulating spin, layer, and valley DoFs. MoS2/graphene heterostructures, harboring prominent spin-transport properties of graphene, giant spin-orbit coupling, and spin-valley polarization of MoS2, are predicted as a perfect venue for optospintronics. Here, we report the epitaxial growth of commensurate MoS2 on graphene with high quality by chemical vapor deposition, and demonstrate robust temperature-independent spin-valley polarization at off-resonant excitation. We further show that the helicity of B exciton is larger than that of A exciton, allowing the manipulation of spin bits in the commensurate heterostructures by both optical helicity and wavelength. Our results open a window for controlling spin DoF by light and pave a way for taking spin qubits as information carriers in the next-generation valley-controlled optospintronics.-
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prb/-
dc.relation.ispartofPhysical Review B: covering condensed matter and materials physics-
dc.titleRobust spin-valley polarization in commensurate Mo S2 /graphene heterostructures-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.97.115445-
dc.identifier.scopuseid_2-s2.0-85044960444-
dc.identifier.volume97-
dc.identifier.issue11-
dc.identifier.spagearticle no. 115445-
dc.identifier.epagearticle no. 115445-
dc.identifier.eissn2469-9969-
dc.identifier.isiWOS:000428387700006-
dc.identifier.issnl2469-9950-

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