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Article: Manufacturing at nanoscale: Top-down, bottom-up and system engineering

TitleManufacturing at nanoscale: Top-down, bottom-up and system engineering
Authors
KeywordsHybrid top-down and bottom-up process
Ultra-molding and imprinting
System engineering
Plasmonic imaging lithography
Nanoscale
Manufacturing
Issue Date2004
Citation
Journal of Nanoparticle Research, 2004, v. 6, n. 1, p. 125-130 How to Cite?
AbstractThe current nano-technology revolution is facing several major challenges: to manufacture nanodevices below 20 nm, to fabricate three-dimensional complex nano-structures, and to heterogeneously integrate multiple functionalities. To tackle these grand challenges, the Center for Scalable and Integrated NAno-Manufacturing (SINAM), a NSF Nanoscale Science and Engineering Center, set its goal to establish a new manufacturing paradigm that integrates an array of new nano-manufacturing technologies, including the plasmonic imaging lithography and ultramolding imprint lithography aiming toward critical resolution of 1-10 nm and the hybrid top-down and bottom-up technologies to achieve massively parallel integration of heterogeneous nanoscale components into higher-order structures and devices. Furthermore, SINAM will develop system engineering strategies to scale-up the nano-manufacturing technologies. SINAMs integrated research and education platform will shed light to a broad range of potential applications in computing, telecommunication, photonics, biotechnology, health care, and national security.
Persistent Identifierhttp://hdl.handle.net/10722/256899
ISSN
2022 Impact Factor: 2.5
2020 SCImago Journal Rankings: 0.453
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, Xiang-
dc.contributor.authorSun, Cheng-
dc.contributor.authorFang, Nicholas-
dc.date.accessioned2018-07-24T08:58:16Z-
dc.date.available2018-07-24T08:58:16Z-
dc.date.issued2004-
dc.identifier.citationJournal of Nanoparticle Research, 2004, v. 6, n. 1, p. 125-130-
dc.identifier.issn1388-0764-
dc.identifier.urihttp://hdl.handle.net/10722/256899-
dc.description.abstractThe current nano-technology revolution is facing several major challenges: to manufacture nanodevices below 20 nm, to fabricate three-dimensional complex nano-structures, and to heterogeneously integrate multiple functionalities. To tackle these grand challenges, the Center for Scalable and Integrated NAno-Manufacturing (SINAM), a NSF Nanoscale Science and Engineering Center, set its goal to establish a new manufacturing paradigm that integrates an array of new nano-manufacturing technologies, including the plasmonic imaging lithography and ultramolding imprint lithography aiming toward critical resolution of 1-10 nm and the hybrid top-down and bottom-up technologies to achieve massively parallel integration of heterogeneous nanoscale components into higher-order structures and devices. Furthermore, SINAM will develop system engineering strategies to scale-up the nano-manufacturing technologies. SINAMs integrated research and education platform will shed light to a broad range of potential applications in computing, telecommunication, photonics, biotechnology, health care, and national security.-
dc.languageeng-
dc.relation.ispartofJournal of Nanoparticle Research-
dc.subjectHybrid top-down and bottom-up process-
dc.subjectUltra-molding and imprinting-
dc.subjectSystem engineering-
dc.subjectPlasmonic imaging lithography-
dc.subjectNanoscale-
dc.subjectManufacturing-
dc.titleManufacturing at nanoscale: Top-down, bottom-up and system engineering-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1023/B:NANO.0000023232.03654.40-
dc.identifier.scopuseid_2-s2.0-1842658928-
dc.identifier.volume6-
dc.identifier.issue1-
dc.identifier.spage125-
dc.identifier.epage130-
dc.identifier.isiWOS:000220733200014-
dc.identifier.issnl1388-0764-

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