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Article: Heterojunction silicon microwire solar cells

TitleHeterojunction silicon microwire solar cells
Authors
Keywordsradial junction
surface passivation
Solar cells
silicon microwire
silicon heterojunction
Issue Date2012
Citation
Nano Letters, 2012, v. 12, n. 12, p. 6278-6282 How to Cite?
AbstractWe report radial heterojunction solar cells of amorphous silicon on crystalline silicon microwires with high surface passivation. While the shortened collection path is exploited to increase the photocurrent, proper choice of the wire radius and the highly passivated surface prevent drastic decrease in the voltage due to high surface-to-volume ratio. The heterojunction is formed by depositing a ∼12-16 nm of amorphous silicon on crystalline silicon wires of radius approximately equal to minority carrier diffusion length (∼10 μm). In spite of very short carrier lifetime (<1 μs), the microwire array devices generate photocurrent of ∼30 mA/cm2, and the same time, voltages close to 600 mV are achieved, leading to efficiency in excess of 12% in extremely short carrier lifetime silicon. We also find that formation of nanocrystallites of silicon in the deposited film results in loss of the expected passivation. © 2012 American Chemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/257121
ISSN
2020 Impact Factor: 11.189
2020 SCImago Journal Rankings: 4.853
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGharghi, Majid-
dc.contributor.authorFathi, Ehsanollah-
dc.contributor.authorKante, Boubacar-
dc.contributor.authorSivoththaman, Siva-
dc.contributor.authorZhang, Xiang-
dc.date.accessioned2018-07-24T08:58:54Z-
dc.date.available2018-07-24T08:58:54Z-
dc.date.issued2012-
dc.identifier.citationNano Letters, 2012, v. 12, n. 12, p. 6278-6282-
dc.identifier.issn1530-6984-
dc.identifier.urihttp://hdl.handle.net/10722/257121-
dc.description.abstractWe report radial heterojunction solar cells of amorphous silicon on crystalline silicon microwires with high surface passivation. While the shortened collection path is exploited to increase the photocurrent, proper choice of the wire radius and the highly passivated surface prevent drastic decrease in the voltage due to high surface-to-volume ratio. The heterojunction is formed by depositing a ∼12-16 nm of amorphous silicon on crystalline silicon wires of radius approximately equal to minority carrier diffusion length (∼10 μm). In spite of very short carrier lifetime (<1 μs), the microwire array devices generate photocurrent of ∼30 mA/cm2, and the same time, voltages close to 600 mV are achieved, leading to efficiency in excess of 12% in extremely short carrier lifetime silicon. We also find that formation of nanocrystallites of silicon in the deposited film results in loss of the expected passivation. © 2012 American Chemical Society.-
dc.languageeng-
dc.relation.ispartofNano Letters-
dc.subjectradial junction-
dc.subjectsurface passivation-
dc.subjectSolar cells-
dc.subjectsilicon microwire-
dc.subjectsilicon heterojunction-
dc.titleHeterojunction silicon microwire solar cells-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/nl3033813-
dc.identifier.scopuseid_2-s2.0-84870899002-
dc.identifier.volume12-
dc.identifier.issue12-
dc.identifier.spage6278-
dc.identifier.epage6282-
dc.identifier.eissn1530-6992-
dc.identifier.isiWOS:000312122100040-
dc.identifier.issnl1530-6984-

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