File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Lifshitz transition in the two-dimensional Hubbard model

TitleLifshitz transition in the two-dimensional Hubbard model
Authors
Issue Date2012
PublisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prb/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2012, v. 86 n. 16, article no. 165136 How to Cite?
AbstractUsing large-scale dynamical cluster quantum Monte Carlo simulations, we study the Lifshitz transition of the two-dimensional Hubbard model with next-nearest-neighbor hopping (t ′), chemical potential, and temperature as control parameters. At t ′≤0, we identify a line of Lifshitz transition points associated with a change in the Fermi surface topology at zero temperature. In the overdoped region, the Fermi surface is complete and electron-like; across the Lifshitz transition, the Fermi surface becomes hole-like and develops a pseudogap. At (or very close to) the Lifshitz transition points, a van Hove singularity in the density of states crosses the Fermi level. The van Hove singularity occurs at finite doping due to correlation effects and becomes more singular when t ′ becomes more negative. The resulting temperature dependence on the bare d-wave pairing susceptibility close to the Lifshitz points is significantly different from that found in the traditional van Hove scenarios. Such unambiguous numerical observation of the Lifshitz transition at t ′≤0 extends our understanding of the quantum critical region in the phase diagram and shines lights on future investigations of the nature of the quantum critical point in the two-dimensional Hubbard model. © 2012 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/268537
ISSN
2014 Impact Factor: 3.736
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, K. S.-
dc.contributor.authorMeng, Z. Y.-
dc.contributor.authorPruschke, T.-
dc.contributor.authorMoreno, J.-
dc.contributor.authorJarrell, M.-
dc.date.accessioned2019-03-25T07:59:59Z-
dc.date.available2019-03-25T07:59:59Z-
dc.date.issued2012-
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2012, v. 86 n. 16, article no. 165136-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10722/268537-
dc.description.abstractUsing large-scale dynamical cluster quantum Monte Carlo simulations, we study the Lifshitz transition of the two-dimensional Hubbard model with next-nearest-neighbor hopping (t ′), chemical potential, and temperature as control parameters. At t ′≤0, we identify a line of Lifshitz transition points associated with a change in the Fermi surface topology at zero temperature. In the overdoped region, the Fermi surface is complete and electron-like; across the Lifshitz transition, the Fermi surface becomes hole-like and develops a pseudogap. At (or very close to) the Lifshitz transition points, a van Hove singularity in the density of states crosses the Fermi level. The van Hove singularity occurs at finite doping due to correlation effects and becomes more singular when t ′ becomes more negative. The resulting temperature dependence on the bare d-wave pairing susceptibility close to the Lifshitz points is significantly different from that found in the traditional van Hove scenarios. Such unambiguous numerical observation of the Lifshitz transition at t ′≤0 extends our understanding of the quantum critical region in the phase diagram and shines lights on future investigations of the nature of the quantum critical point in the two-dimensional Hubbard model. © 2012 American Physical Society.-
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prb/-
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)-
dc.titleLifshitz transition in the two-dimensional Hubbard model-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.86.165136-
dc.identifier.scopuseid_2-s2.0-84869015625-
dc.identifier.volume86-
dc.identifier.issue16-
dc.identifier.spagearticle no. 165136-
dc.identifier.epagearticle no. 165136-
dc.identifier.eissn1550-235X-
dc.identifier.isiWOS:000310436000005-
dc.identifier.issnl1098-0121-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats