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Article: Engineering Point-Defect States in Monolayer WSe2

TitleEngineering Point-Defect States in Monolayer WSe2
Authors
KeywordsDefect engineering
Local magnetic moment
Midgap defect states
Spin splitting
Transition metal dichalcogenides
Issue Date2019
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/ancac3/index.html
Citation
ACS Nano, 2019, v. 13 n. 2, p. 1595-1602 How to Cite?
AbstractDefect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe2 by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave function such that previously hidden midgap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first-principle calculations. More interestingly, the calculations show that an unpaired electron donated by the K atom can lead to a local magnetic moment, exhibiting an on–off switching by the odd–even number of electron filling. Experimentally the Fermi level is pinned above all defect states due to the graphite substrate, corresponding to an off state. The close agreement between theory and experiment in the off state, on the other hand, suggests the possibility of gate-programmable magnetic moments at the defects.
Persistent Identifierhttp://hdl.handle.net/10722/269606
ISSN
2021 Impact Factor: 18.027
2020 SCImago Journal Rankings: 5.554
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, C-
dc.contributor.authorWang, C-
dc.contributor.authorYang, F-
dc.contributor.authorHuang, JK-
dc.contributor.authorLi, LJ-
dc.contributor.authorYao, W-
dc.contributor.authorJi, W-
dc.contributor.authorShih, CK-
dc.date.accessioned2019-04-24T08:11:05Z-
dc.date.available2019-04-24T08:11:05Z-
dc.date.issued2019-
dc.identifier.citationACS Nano, 2019, v. 13 n. 2, p. 1595-1602-
dc.identifier.issn1936-0851-
dc.identifier.urihttp://hdl.handle.net/10722/269606-
dc.description.abstractDefect engineering is a key approach for tailoring the properties of the emerging two-dimensional semiconductors. Here, we report an atomic engineering of the W vacancy in monolayer WSe2 by single potassium atom decoration. The K decoration alters the energy states and reshapes the wave function such that previously hidden midgap states become visible with well-resolved multiplets in scanning tunneling spectroscopy. Their energy levels are in good agreement with first-principle calculations. More interestingly, the calculations show that an unpaired electron donated by the K atom can lead to a local magnetic moment, exhibiting an on–off switching by the odd–even number of electron filling. Experimentally the Fermi level is pinned above all defect states due to the graphite substrate, corresponding to an off state. The close agreement between theory and experiment in the off state, on the other hand, suggests the possibility of gate-programmable magnetic moments at the defects.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journals/ancac3/index.html-
dc.relation.ispartofACS Nano-
dc.subjectDefect engineering-
dc.subjectLocal magnetic moment-
dc.subjectMidgap defect states-
dc.subjectSpin splitting-
dc.subjectTransition metal dichalcogenides-
dc.titleEngineering Point-Defect States in Monolayer WSe2-
dc.typeArticle-
dc.identifier.emailYao, W: wangyao@hku.hk-
dc.identifier.authorityYao, W=rp00827-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsnano.8b07595-
dc.identifier.pmid30689361-
dc.identifier.scopuseid_2-s2.0-85061919666-
dc.identifier.hkuros297403-
dc.identifier.volume13-
dc.identifier.issue2-
dc.identifier.spage1595-
dc.identifier.epage1602-
dc.identifier.isiWOS:000460199400060-
dc.publisher.placeUnited States-
dc.identifier.issnl1936-0851-

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