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Article: First-principles based ballistic transport simulation of monolayer and few-layer InSe FETs

TitleFirst-principles based ballistic transport simulation of monolayer and few-layer InSe FETs
Authors
Issue Date2019
PublisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://iopscience.iop.org/1347-4065/
Citation
Japanese Journal of Applied Physics, 2019, v. 58 n. SB, p. SBBA02:1-6 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/270094
ISSN
2021 Impact Factor: 1.491
2020 SCImago Journal Rankings: 0.487
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChang, PY-
dc.contributor.authorLiu, XY-
dc.contributor.authorLiu, F-
dc.contributor.authorDu, G-
dc.date.accessioned2019-05-20T05:09:27Z-
dc.date.available2019-05-20T05:09:27Z-
dc.date.issued2019-
dc.identifier.citationJapanese Journal of Applied Physics, 2019, v. 58 n. SB, p. SBBA02:1-6-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10722/270094-
dc.languageeng-
dc.publisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://iopscience.iop.org/1347-4065/-
dc.relation.ispartofJapanese Journal of Applied Physics-
dc.rightsJapanese Journal of Applied Physics. Copyright © Institute of Physics Publishing Ltd.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.titleFirst-principles based ballistic transport simulation of monolayer and few-layer InSe FETs-
dc.typeArticle-
dc.identifier.authorityLiu, F=rp02229-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.7567/1347-4065/aafb4f-
dc.identifier.scopuseid_2-s2.0-85065499675-
dc.identifier.hkuros297726-
dc.identifier.volume58-
dc.identifier.issueSB-
dc.identifier.spageSBBA02:1-
dc.identifier.epage6-
dc.identifier.isiWOS:000464309900009-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl0021-4922-

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