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Article: Storage and transfer of optical excitation energy in GaInP epilayer: Photoluminescence signatures

TitleStorage and transfer of optical excitation energy in GaInP epilayer: Photoluminescence signatures
Authors
KeywordsGaInP alloy
Photoluminescence
Energy transfer
Photon recycling
Issue Date2019
PublisherElsevier for Chinese Society for Metals. The Journal's web site is located at http://www.sciencedirect.com.eproxy1.lib.hku.hk/science/journal/10050302?sdc=1
Citation
Journal of Materials Science and Technology, 2019, v. 35 n. 7, p. 1364-1367 How to Cite?
AbstractGaInP alloy could be the most trusted key material for fabricating super-high-efficiency single- and multi-junction solar cells, especially for space applications. The storage and transfer of optical excitation energy in this key alloy is thus a key subject of the energy conversion from optical to electrical. In this article we present a study of the subject through investigating photoluminescence (PL) degradation in the GaInP epilayer at 4 K under the continuous optical excitations of ultraviolet (UV) 325 nm, visible 488.0 and 514.5 nm lasers. It is found that the decline of PL intensity with the irradiation time may be represented by I(t)/I 0 =1+tτ −1 −1 +C, where I 0 is the luminescence intensity at the beginning of irradiation, τ a time constant, and C a background. Moreover, the PL degradation degree reduces with increasing the excitation wavelength. In addition, some red shift of the PL peak is observed accompanying with the intensity decline under the UV laser excitation. These PL signatures indicate that the localized carriers within the local atomic ordering domains play a major role in the storage and transfer of the excitation energy via photon recycling processes. © 2019
Persistent Identifierhttp://hdl.handle.net/10722/271269
ISSN
2020 Impact Factor: 8.067
2015 SCImago Journal Rankings: 0.869
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXu, S-
dc.contributor.authorHuang, Y-
dc.contributor.authorSu, Z-
dc.contributor.authorWang, R-
dc.contributor.authorDong, J-
dc.contributor.authorZhu, D-
dc.date.accessioned2019-06-24T01:06:38Z-
dc.date.available2019-06-24T01:06:38Z-
dc.date.issued2019-
dc.identifier.citationJournal of Materials Science and Technology, 2019, v. 35 n. 7, p. 1364-1367-
dc.identifier.issn1005-0302-
dc.identifier.urihttp://hdl.handle.net/10722/271269-
dc.description.abstractGaInP alloy could be the most trusted key material for fabricating super-high-efficiency single- and multi-junction solar cells, especially for space applications. The storage and transfer of optical excitation energy in this key alloy is thus a key subject of the energy conversion from optical to electrical. In this article we present a study of the subject through investigating photoluminescence (PL) degradation in the GaInP epilayer at 4 K under the continuous optical excitations of ultraviolet (UV) 325 nm, visible 488.0 and 514.5 nm lasers. It is found that the decline of PL intensity with the irradiation time may be represented by I(t)/I 0 =1+tτ −1 −1 +C, where I 0 is the luminescence intensity at the beginning of irradiation, τ a time constant, and C a background. Moreover, the PL degradation degree reduces with increasing the excitation wavelength. In addition, some red shift of the PL peak is observed accompanying with the intensity decline under the UV laser excitation. These PL signatures indicate that the localized carriers within the local atomic ordering domains play a major role in the storage and transfer of the excitation energy via photon recycling processes. © 2019-
dc.languageeng-
dc.publisherElsevier for Chinese Society for Metals. The Journal's web site is located at http://www.sciencedirect.com.eproxy1.lib.hku.hk/science/journal/10050302?sdc=1-
dc.relation.ispartofJournal of Materials Science and Technology-
dc.subjectGaInP alloy-
dc.subjectPhotoluminescence-
dc.subjectEnergy transfer-
dc.subjectPhoton recycling-
dc.titleStorage and transfer of optical excitation energy in GaInP epilayer: Photoluminescence signatures-
dc.typeArticle-
dc.identifier.emailXu, S: sjxu@hku.hk-
dc.identifier.authorityXu, S=rp00821-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.jmst.2019.03.010-
dc.identifier.scopuseid_2-s2.0-85063899915-
dc.identifier.hkuros298061-
dc.identifier.volume35-
dc.identifier.issue7-
dc.identifier.spage1364-
dc.identifier.epage1367-
dc.identifier.isiWOS:000466369600018-
dc.publisher.placeChina-
dc.identifier.issnl1005-0302-

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