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Article: Thermoelectric transport properties of CdxBiyGe1-x-yTe alloys

TitleThermoelectric transport properties of CdxBiyGe1-x-yTe alloys
Authors
Keywordsthermoelectric
band convergence
lattice thermal conductivity
average ZT
Issue Date2018
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick
Citation
ACS Applied Materials & Interfaces, 2018, v. 10 n. 46, p. 39904-39911 How to Cite?
AbstractBand convergence has been proven as an effective approach for enhancing thermoelectric performance, particularly in p-type IV–VI semiconductors, where the superior electronic performance originates from the contributions of both L and Σ band valleys when they converge to have a small energy offset. When alloying with cubic IV–VI semiconductors, CdTe has been found as an effective agent for achieving such a band convergence. This work focuses on the effect of CdTe-alloying on the thermoelectric transport properties of GeTe, where the carrier concentration can be tuned in a broad range through Bi-doping on Ge site. It is found that CdTe-alloying indeed helps to converge the valence bands of GeTe in both low-T rhombohedral and high-T cubic phases for an increase in Seebeck coefficient with a decrease in mobility. In addition, the strong phonon scattering due to the existence of high-concentration Cd/Ge and Bi/Ge substitutions leads the lattice thermal conductivity to be reduced to as low as 0.6 W/(m-K). These lead to an effectively increased average thermoelectric figure of merit (ZTave ∼ 1.2) at 300–800 K, which is higher than that of many IV–VI materials with CdTe-alloying or alternatively with MnTe-, MgTe-, SrTe-, EuTe-, or YbTe-alloying for a similar band convergence effect.
Persistent Identifierhttp://hdl.handle.net/10722/272239
ISSN
2023 Impact Factor: 8.3
2023 SCImago Journal Rankings: 2.058
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLi, J-
dc.contributor.authorLi, W-
dc.contributor.authorBu, Z-
dc.contributor.authorWang, X-
dc.contributor.authorGao, B-
dc.contributor.authorXIONG, F-
dc.contributor.authorChen, Y-
dc.contributor.authorPei, Y-
dc.date.accessioned2019-07-20T10:38:24Z-
dc.date.available2019-07-20T10:38:24Z-
dc.date.issued2018-
dc.identifier.citationACS Applied Materials & Interfaces, 2018, v. 10 n. 46, p. 39904-39911-
dc.identifier.issn1944-8244-
dc.identifier.urihttp://hdl.handle.net/10722/272239-
dc.description.abstractBand convergence has been proven as an effective approach for enhancing thermoelectric performance, particularly in p-type IV–VI semiconductors, where the superior electronic performance originates from the contributions of both L and Σ band valleys when they converge to have a small energy offset. When alloying with cubic IV–VI semiconductors, CdTe has been found as an effective agent for achieving such a band convergence. This work focuses on the effect of CdTe-alloying on the thermoelectric transport properties of GeTe, where the carrier concentration can be tuned in a broad range through Bi-doping on Ge site. It is found that CdTe-alloying indeed helps to converge the valence bands of GeTe in both low-T rhombohedral and high-T cubic phases for an increase in Seebeck coefficient with a decrease in mobility. In addition, the strong phonon scattering due to the existence of high-concentration Cd/Ge and Bi/Ge substitutions leads the lattice thermal conductivity to be reduced to as low as 0.6 W/(m-K). These lead to an effectively increased average thermoelectric figure of merit (ZTave ∼ 1.2) at 300–800 K, which is higher than that of many IV–VI materials with CdTe-alloying or alternatively with MnTe-, MgTe-, SrTe-, EuTe-, or YbTe-alloying for a similar band convergence effect.-
dc.languageeng-
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/aamick-
dc.relation.ispartofACS Applied Materials & Interfaces-
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in [JournalTitle], copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see [insert ACS Articles on Request author-directed link to Published Work, see http://pubs.acs.org/page/policy/articlesonrequest/index.html].-
dc.subjectthermoelectric-
dc.subjectband convergence-
dc.subjectlattice thermal conductivity-
dc.subjectaverage ZT-
dc.titleThermoelectric transport properties of CdxBiyGe1-x-yTe alloys-
dc.typeArticle-
dc.identifier.emailChen, Y: yuechen@hku.hk-
dc.identifier.authorityChen, Y=rp01925-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/acsami.8b15080-
dc.identifier.pmid30375223-
dc.identifier.scopuseid_2-s2.0-85056474354-
dc.identifier.hkuros298967-
dc.identifier.volume10-
dc.identifier.issue46-
dc.identifier.spage39904-
dc.identifier.epage39911-
dc.identifier.isiWOS:000451496000055-
dc.publisher.placeUnited States-
dc.identifier.issnl1944-8244-

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