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- Publisher Website: 10.1016/j.mtphys.2019.03.005
- Scopus: eid_2-s2.0-85064948759
- WOS: WOS:000492832200009
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Article: Maximization of transporting bands for high-performance SnTe alloy thermoelectrics
Title | Maximization of transporting bands for high-performance SnTe alloy thermoelectrics |
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Authors | |
Issue Date | 2019 |
Publisher | Elsevier Ltd. The Journal's web site is located at http://www.journals.elsevier.com/materials-today-physics |
Citation | Materials Today Physics, 2019, v. 9, article no. 100091 How to Cite? |
Abstract | Environment-friendly thermoelectric SnTe has recently attracted much attention as a top candidate for replacing conventional p-type PbTe. Effective strategies leading to great advancements in this material are typified by manipulation of valence bands and chemical defects, among of which MgTe- and Cu2Te-alloying are particularly successful, respectively, for valence band convergence and lattice thermal conductivity minimization. However, pristine SnTe enables a MgTe solubility of only ∼12%, which might limit the full convergence of possibly transporting bands for an electronic performance maximization. In this work, we show an approach to increase the MgTe solubility up to ∼20%, leading to an involvement of one more highly degenerated valence band Λ for charge transport in addition to existing L and Σ bands. Such a collection of many transporting valence bands enables a great improvement in electronic performance, as well as a significant enhancement in thermoelectric figure of merit with a well-reduced lattice thermal conductivity by the point defects introduced in these SnTe alloys. |
Persistent Identifier | http://hdl.handle.net/10722/272249 |
ISSN | 2023 Impact Factor: 10.0 2023 SCImago Journal Rankings: 2.304 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Tang, J | - |
dc.contributor.author | Yao, Z | - |
dc.contributor.author | Chen, Z | - |
dc.contributor.author | Lin, S | - |
dc.contributor.author | Zhang, X | - |
dc.contributor.author | Xiong, F | - |
dc.contributor.author | Li, W | - |
dc.contributor.author | Chen, Y | - |
dc.contributor.author | Pei, Y | - |
dc.date.accessioned | 2019-07-20T10:38:35Z | - |
dc.date.available | 2019-07-20T10:38:35Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Materials Today Physics, 2019, v. 9, article no. 100091 | - |
dc.identifier.issn | 2542-5293 | - |
dc.identifier.uri | http://hdl.handle.net/10722/272249 | - |
dc.description.abstract | Environment-friendly thermoelectric SnTe has recently attracted much attention as a top candidate for replacing conventional p-type PbTe. Effective strategies leading to great advancements in this material are typified by manipulation of valence bands and chemical defects, among of which MgTe- and Cu2Te-alloying are particularly successful, respectively, for valence band convergence and lattice thermal conductivity minimization. However, pristine SnTe enables a MgTe solubility of only ∼12%, which might limit the full convergence of possibly transporting bands for an electronic performance maximization. In this work, we show an approach to increase the MgTe solubility up to ∼20%, leading to an involvement of one more highly degenerated valence band Λ for charge transport in addition to existing L and Σ bands. Such a collection of many transporting valence bands enables a great improvement in electronic performance, as well as a significant enhancement in thermoelectric figure of merit with a well-reduced lattice thermal conductivity by the point defects introduced in these SnTe alloys. | - |
dc.language | eng | - |
dc.publisher | Elsevier Ltd. The Journal's web site is located at http://www.journals.elsevier.com/materials-today-physics | - |
dc.relation.ispartof | Materials Today Physics | - |
dc.title | Maximization of transporting bands for high-performance SnTe alloy thermoelectrics | - |
dc.type | Article | - |
dc.identifier.email | Chen, Y: yuechen@hku.hk | - |
dc.identifier.authority | Chen, Y=rp01925 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.mtphys.2019.03.005 | - |
dc.identifier.scopus | eid_2-s2.0-85064948759 | - |
dc.identifier.hkuros | 298979 | - |
dc.identifier.volume | 9 | - |
dc.identifier.spage | article no. 100091 | - |
dc.identifier.epage | article no. 100091 | - |
dc.identifier.isi | WOS:000492832200009 | - |
dc.publisher.place | United Kingdom | - |
dc.identifier.issnl | 2542-5293 | - |